Advanced Thermal Processing of Semiconductor Materials in the MSEC-Range

2006 ◽  
Author(s):  
W. Skorupa ◽  
R.A. Yankov ◽  
M. Voelskow ◽  
W. Anwand ◽  
D. Panknin ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Semiconductor Materials

Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing

2004 ◽  
Vol 810 ◽  
Author(s):  
W. Skorupa ◽  
D. Panknin ◽  
M. Voelskow ◽  
W. Anwand ◽  
T. Gebel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Thermal Processing ◽  
Flash Lamp ◽  
Semiconductor Materials ◽  
Great Promise ◽  
Heteroepitaxial Growth ◽  
Junction Formation ◽  
Cubic Silicon Carbide ◽  
Novel Devices

ABSTRACTThe use of flash lamp annealing for processing semiconductor materials is outlined. Specific applications include ultra-shallow junction formation and heteroepitaxial growth of improved quality thin films of cubic silicon carbide. It is demonstrated that flash lamp annealing holds great promise as a technique for fabricating novel devices.

Advanced thermal processing of semiconductor materials in the millisecond range

Vacuum ◽  
2005 ◽  
Vol 78 (2-4) ◽  
pp. 673-677 ◽  
Author(s):  
W. Skorupa ◽  
W. Anwand ◽  
D. Panknin ◽  
M. Voelskow ◽  
R.A. Yankov ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Semiconductor Materials ◽  
Millisecond Range

Properties of Pt/Ti Contacts to III-V Materials

1990 ◽  
Vol 216 ◽  
Author(s):  
A. Katz ◽  
S. Nakahara ◽  
S. N. G. Chu ◽  
B. E. Weir ◽  
C. R. Abemathy ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Microstructure Evolution ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electron Beam Evaporation ◽  
Semiconductor Materials ◽  
Processing Conditions ◽  
Ternary Semiconductor ◽  
P Type

ABSTRACTPt/Ti contact to variety of binary III-V and related ternary semiconductor materials were established. These contacts were formed by electron beam evaporation and subsequent rapid thermal processing in order to sinter the metal-semiconductor systems. The contacts to p-type InAs, GaAs, In0.53Ga0.43As, In0.52Al0.4As and Ga0.7Al0.3As were ohmic, as a result of heating at temperatures of 450°C or higher. The Pt/Ti contacts to InP and GaP displayed Schottky behavior as-deposited and preserved the rectifying nature through heat treatments, regardless of the processing conditions. The electrical properties and the microstructure evolution in these 7 systems is discussed in this paper.

Application of electron beams in thermal processing of semiconductor materials and devices

1984 ◽  
Vol 15 (2) ◽  
pp. 5-23 ◽  
Author(s):  
R.A. McMahon ◽  
H. Ahmed ◽  
D.J. Godfrey ◽  
M.G. Pitt
Keyword(s):  
Thermal Processing ◽  
Electron Beams ◽  
Semiconductor Materials

Cathodoluminescence of Catalyst Crystallites

1982 ◽  
Vol 40 ◽  
pp. 664-665
Author(s):  
E.D. Boyes ◽  
P.L. Gai ◽  
D.B. Darby ◽  
C. Warwick
Keyword(s):  
Defect Density ◽  
Chemical Properties ◽  
Operating Conditions ◽  
Semiconductor Materials ◽  
Environmental Cell ◽  
High Resolution Structure ◽  
Commercially Important ◽  
Crystallographic Defects ◽  
Resolution Structure

The extended crystallographic defects introduced into some oxide catalysts under operating conditions may be a consequence and accommodation of the changes produced by the catalytic activity, rather than always being the origin of the reactivity. Operation without such defects has been established for the commercially important tellurium molybdate system. in addition it is clear that the point defect density and the electronic structure can both have a significant influence on the chemical properties and hence on the effectiveness (activity and selectivity) of the material as a catalyst. SEM/probe techniques more commonly applied to semiconductor materials, have been investigated to supplement the information obtained from in-situ environmental cell HVEM, ultra-high resolution structure imaging and more conventional AEM and EPMA chemical microanalysis.

Deriving ultrapure three-dimensional semiconductor materials under space vacuum conditions

2003 ◽  
Vol 8 (5-6) ◽  
pp. 30-32
Author(s):  
B.E. Paton ◽  
◽  
E.A. Asnis ◽  
S.P. Zabolotin ◽  
P.I. Baranskii ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Semiconductor Materials ◽  
Space Vacuum
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