Lightpipe proximity effects on Si wafer temperature in rapid thermal processing tools

2004 ◽  
Author(s):  
K.G. Kreider ◽  
D.H. Chen ◽  
D.P. DeWitt ◽  
W.A. Kimes ◽  
B.K. Tsai
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Proximity Effects ◽  
Wafer Temperature ◽  
Si Wafer

scholarly journals Simulation of silicon wafers heating during rapid thermal processing using “UBTO 1801” unit

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 79-86
Author(s):  
J. A. Solovjov ◽  
V. A. Pilipenko ◽  
V. P. Yakovlev
Keyword(s):  
Mathematical Model ◽  
Silicon Wafer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Light Flux ◽  
Silicon Wafers ◽  
Wafer Surface ◽  
Constant Density ◽  
Wafer Temperature

The present work is devoted to determination of the dependence of the heating temperature of the silicon wafer on the lamps power and the heating time during rapid thermal processing using “UBTO 1801” unit by irradiating the wafer backside with an incoherent flow of constant density light. As a result, a mathematical model of silicon wafer temperature variation was developed on the basis of the equation of nonstationary thermal conductivity and known temperature dependencies of the thermophysical properties of silicon and the emissivity of aluminum and silver applied to the planar surface of the silicon wafer. For experimental determination of the numerical parameters of the mathematical model, silicon wafers were heated with light single pulse of constant power to the temperature of one of three phase transitions such as aluminum-silicon eutectic formation, aluminum melting and silver melting. The time of phase transition formation on the wafer surface during rapid thermal processing was fixed by pyrometric method. In accordance with the developed mathematical model, we determined the conversion coefficient of the lamps electric power to the light flux power density with the numerical value of 5.16∙10-3 cm-2 . Increasing the lamps power from 690 to 2740 W leads to an increase in the silicon wafer temperature during rapid thermal processing from 550°to 930°K, respectively. With that, the wafer temperature prediction error in compliance with developed mathematical model makes less than 2.3 %. The work results can be used when developing new procedures of rapid thermal processing for silicon wafers.

Difference between Wafer Temperature and Thermocouple Reading during rapid Thermal Processing

1998 ◽  
Vol 525 ◽  
Author(s):  
T. Borca-Tasciuc ◽  
D. A. Achimov ◽  
G. Chen
Keyword(s):  
Temperature Measurement ◽  
Thermophysical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Simple Analytical Model ◽  
Calibration Standard ◽  
Wafer Temperature ◽  
Thermocouple Reading ◽  
The Difference ◽  
Thermocouple Temperature

ABSTRACTThermocouples are often used as a calibration standard for rapid thermal processing. Although it has been recognized that the thermocouple temperature can be different from the wafer temperature, the magnitude of the temperature difference is difficult to quantify. In this work, we present a simple analytical model to demonstrate the difference between the thermocouple temperature and the true wafer temperature. The results show that a large difference can exist between the thermocouple and the wafer temperature. This is because the optical and thermophysical properties of the thermocouple and the glue material are different from those of the wafer. The model results show that temperature measurement becomes more accurate if fine diameter thermocouple wires with very low emissivity are used.

In-Situ Temperature Control for Rtp Via Thermal Expansion Measurement

1993 ◽  
Vol 303 ◽  
Author(s):  
Bruce Peuse ◽  
Allan Rosekrans
Keyword(s):  
Thermal Expansion ◽  
Temperature Control ◽  
Measurement Technique ◽  
Preliminary Data ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Wafer Temperature ◽  
Thermal Expansion Measurement

ABSTRACTA new method of temperature control for rapid thermal processing of silicon wafers is presented whereby in-situ wafer temperature is determined by measurement of wafer thermal expansion via an optical micrometer mechanism. The expansion measurement technique and its implementation into a rapid thermal processing system for temperature control are described. Preliminary data show the wafer to wafer temperature repeatability to be 1% (3-σ) using this technique.

The Potential Effect of Multilayer Patterns on Temperature Uniformity During Rapid Thermal Processing

1995 ◽  
Vol 387 ◽  
Author(s):  
Jeffrey P. Hebb ◽  
Klavs F. Jensen ◽  
Erik W. Egan
Keyword(s):  
Thermal Processing ◽  
Transport Model ◽  
Rapid Thermal Processing ◽  
Potential Effect ◽  
Electromagnetic Theory ◽  
Radiative Properties ◽  
Temperature Uniformity ◽  
Wafer Temperature ◽  
Single Side ◽  
Side Illumination

AbstractThis work aims to systematically gain an understanding of the effects of multilayer patterns on wafer temperature uniformity during rapid thermal processing, and explore possible solutions to the problem. Steady state and transient wafer temperature distributions are simulated by combining a detailed reactor transport model with multilayer electromagnetic theory to predict wafer radiative properties. A generic axisymmetric RTP system with single-side illumination is used as a testbed to explore pattern effects for a simulated source/drain implant anneal.

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