Physical evidence of electromigration in GaAs PHEMT Schottky diodes operating at high forward current density

2005 ◽  
Author(s):  
Y.C. Chou ◽  
D. Leung ◽  
M. Biedenbender ◽  
D. Eng ◽  
Q. Kan ◽  
...  
Keyword(s):  
Current Density ◽  
Schottky Diodes ◽  
Physical Evidence ◽  
Forward Current

Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modelling

2006 ◽  
Vol 527-529 ◽  
pp. 1151-1154
Author(s):  
Andrea Irace ◽  
Vincenzo d'Alessandro ◽  
Giovanni Breglio ◽  
Paolo Spirito ◽  
Andrea Bricconi ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Thermal Resistance ◽  
Current Density ◽  
Negative Temperature Coefficient ◽  
State Of The Art ◽  
Schottky Diodes ◽  
Negative Temperature ◽  
Experimental Characterization ◽  
Thermally Induced ◽  
Forward Current

The electrothermal behavior of 4H-SiC 600 V Schottky diodes operated in forward mode is analyzed through numerical and analytically-based simulations. It is shown that the unexpected occurrence of voltage surges systematically detected in state-of-the-art devices is a thermally-induced effect due to the compound contribution of a) the negative temperature coefficient of the forward current at high voltages and b) the relatively high package-to-ambient thermal resistance. As a main result, it is demonstrated that the proposed approaches are suitable to accurately predict the value of a “critical” current density beyond which voltage surges may arise.

4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density

2017 ◽  
Vol 897 ◽  
pp. 427-430 ◽  
Author(s):  
Johannes Schoeck ◽  
Jonas Buettner ◽  
Mathias Rommel ◽  
Tobias Erlbacher ◽  
Anton J. Bauer
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Current Density ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Low Leakage ◽  
Forward Current ◽  
Low Leakage Current ◽  
Forward Voltage Drop ◽  
Chip Size

High-voltage 4H-SiC Junction Barrier Schottky diodes with a reverse breakdown voltage of over 4.5 kV and a turn-on voltage below 1 V have been fabricated. They achieved a forward current of 5 A at a forward voltage drop of 1.8 V and 20 A at 4.2 V. A low reverse leakage current of 0.3 μA at 1.2 kV and 37 μA at 3.3 kV was measured. The chip size was 7.3 mm x 7.3 mm, the active area 0.25 cm2 and the diode was able to handle a repetitive pulse current density of over 300 A/cm2 without degradation. Floating field rings in combination with a field-stop ring were used as edge termination to reach 73 % of the theoretical breakdown voltage. The epitaxial layer was 32 μm thick, with a nitrogen doping concentration of 1 x 1015 cm-3. The JBS diodes have been manufactured in a 100 mm SiC prototyping line, using well established processing technology, to achieve cost-efficient devices.

scholarly journals Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

2021 ◽  
Vol 68 (3) ◽  
pp. 1369-1373
Author(s):  
Xuanwu Kang ◽  
Yue Sun ◽  
Yingkui Zheng ◽  
Ke Wei ◽  
Hao Wu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Current Density ◽  
Schottky Barrier Diode ◽  
Low Leakage ◽  
Forward Current

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

2014 ◽  
Vol 31 (5) ◽  
pp. 057303 ◽  
Author(s):  
Xiao-Feng Wang ◽  
Zhen-Guang Shao ◽  
Dun-Jun Chen ◽  
Hai Lu ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Forward Current

High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Barrier ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Schottky Barrier Diodes ◽  
Edge Termination ◽  
Forward Current ◽  
Current Voltage ◽  
Thick Oxide Layer ◽  
P Type

ABSTRACTP-type 6H SiC Schottky barrier diodes with good rectifying characteristics upto breakdown voltage as high as 1000V have been successfully fabricated using metal-overlap over a thick oxide layer (∼ 6000 Å) as edge termination and Al as the barrier metal. The influence of the oxide layer edge termination in improving the reverse breakdown voltage as well as the forward current – voltage characteristics is presented. The terminated Schottky diodes indicate a factor of two higher breakdown voltage and 2–3 times larger forward current densities than those without edge termination. The specific series resistance of the unterminated diodes was ∼228 mΩ-cm2, while that of the terminated diodes was ∼84 mΩ-cm2.

Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs

2005 ◽  
Vol 483-485 ◽  
pp. 885-888 ◽  
Author(s):  
J. Neil Merrett ◽  
John R. Williams ◽  
J.D. Cressler ◽  
A.P. Sutton ◽  
Lin Cheng ◽  
...  
Keyword(s):  
Gamma Radiation ◽  
Proton Irradiation ◽  
Schottky Diodes ◽  
Irradiation Effects ◽  
Dramatic Decrease ◽  
Forward Current ◽  
Blocking Voltage ◽  
60Co Source ◽  
Irradiation Performance ◽  
Mev Protons

4H-SiC vertical depletion-mode trench JFETs were fabricated, packaged, and then irradiated with either 6.8 Mrad gamma from a 60Co source, a 9x1011 cm-2 dose of 4 MeV protons, or a 5x1013 cm-2 dose of 63 MeV protons. 4H-SiC Schottky diodes were also fabricated, packaged and exposed to the same irradiations. The trench VJFETs have a nominal blocking voltage of 600 V and a forward current rating of 2 A prior to irradiation. On-state and blocking I-V characteristics were measured after irradiation and compared to the pre-irradiation performance. Devices irradiated with 4 MeV proton and gamma radiation showed a slight increase in on resistance and a decrease in leakage current in blocking mode. Devices irradiated with 63 MeV protons, however, showed a dramatic decrease in forward current. DLTS measurements were performed, and the results of these measurements will be discussed as well.

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