Temperature-dependent scalable large signal CMOS device model developed for millimeter-wave power amplifier design

2011 ◽  
Author(s):  
Navin Mallavarpu ◽  
Debasis Dawn ◽  
Joy Laskar
Keyword(s):  
Millimeter Wave ◽  
Power Amplifier ◽  
Wave Power ◽  
Large Signal ◽  
Temperature Dependent ◽  
Device Model ◽  
Amplifier Design

Modeling diamond semiconductor transistors for millimeter wave power amplifier design

2021 ◽  
Author(s):  
Pankaj B. Shah ◽  
James Weil ◽  
Dmitry A. Ruzmetov ◽  
Leonard M. De La Cruz ◽  
Mahesh R. Neupane ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Power Amplifier ◽  
Wave Power ◽  
Amplifier Design

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

scholarly journals Broadband push-pull power amplifier design methodology based on the GaN component base for high-performance nonlinear junction detectors

2019 ◽  
Vol 30 ◽  
pp. 01011
Author(s):  
Vladimir Klokov ◽  
Nikolay Kargin ◽  
Alexander Garmash ◽  
Ekaterina Guzniaeva
Keyword(s):  
Theoretical Model ◽  
Output Power ◽  
Power Amplifier ◽  
High Performance ◽  
Design Methodology ◽  
Wide Band ◽  
Signal Power ◽  
Large Signal ◽  
Amplifier Design ◽  
Gain Characteristic

The paper presents a description of design methodology for wide-band push-pull large-signal power amplifier based on GaN transistor with an output power of more than 10 W for high-performance Nonlinear Junction Detectors, which allows achieving optimal convergence of the theoretical model in practice, as well as increasing the efficiency of the power amplifier while maintaining a linear gain characteristic.

Machine learning-based broadband GaN HEMT behavioral model applied to class-J power amplifier design

2020 ◽  
pp. 1-9
Author(s):  
Jialin Cai ◽  
Justin King ◽  
Shichang Chen ◽  
Meilin Wu ◽  
Jiangtao Su ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Second Harmonic ◽  
Extraction Procedure ◽  
Equivalent Circuit Model ◽  
Behavioral Model ◽  
Support Vector ◽  
Large Signal ◽  
Proposed Model ◽  
Signal Input ◽  
Amplifier Design

Abstract A novel, broadband, nonlinear behavioral model, based on support vector regression (SVR) is presented in this paper. The proposed model, distinct from existing SVR-based models, incorporates frequency information into its formalism, allowing the model to perform accurate prediction across a wide frequency band. The basic theory of the proposed model, along with model implementation and the model extraction procedure for radio frequency transistor devices is provided. The model is verified through comparisons with the simulation of an equivalent circuit model, as well as experimental measurements of a 10 W Gallium Nitride (GaN) transistor. It is seen that the efficiency prediction throughout the Smith chart, for varying fundamental and second harmonic loads, across a wideband frequency range, show excellent fidelity to the measured results. Device dc self-biasing is also modelled to allow prediction of power amplifier (PA) efficiency, which is shown to be highly accurate when compared with corresponding measured data. Finally, a class-J PA is constructed and measured across the frequency with a large-signal input tone. The resulting measured and modelled values of key PA performance figures are shown to be in excellent agreement, indicating the model is suitable for broadband PA design.

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