A new on-state drain-bias TDDB lifetime model and HCI effect on drain-bias TDDB of ultra thin oxide

2008 IEEE International Reliability Physics Symposium ◽

10.1109/relphy.2008.4558888 ◽

2008 ◽

Cited By ~ 3

Author(s):

P.J. Liao ◽

Chia Lin Chen ◽

J.W. Young ◽

Y.S. Tsai ◽

C.J. Wang ◽

...

Keyword(s):

Drain Bias ◽

Lifetime Model ◽

Thin Oxide

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The Failure Mechanism of Drain Bias TDDB and Characterization of Lifetime Model for HV Depmos

2021 China Semiconductor Technology International Conference (CSTIC) ◽

10.1109/cstic52283.2021.9461439 ◽

2021 ◽

Author(s):

Xiumei Song ◽

Weihai Fan ◽

Xiaobo Duan ◽

Qingyuan Qin

Keyword(s):

Failure Mechanism ◽

Drain Bias ◽

Lifetime Model

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A New "Multi-step" Power-law TDDB Lifetime Model and Boron Penetration Effect on TDDB of Ultra Thin oxide

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual ◽

10.1109/relphy.2007.369957 ◽

2007 ◽

Author(s):

P.J Liao ◽

Chia Lin Chen ◽

C.J Wang ◽

Kenneth Wu

Keyword(s):

Power Law ◽

Penetration Effect ◽

Lifetime Model ◽

Thin Oxide ◽

Boron Penetration

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A new finding on NBTI lifetime model and an investigation on NBTI degradation characteristic for 1.2nm ultra thin oxide

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493214 ◽

2005 ◽

Cited By ~ 4

Author(s):

Chia Lin Chen ◽

Y.M. Lin ◽

C.J. Wang ◽

K. Wu

Keyword(s):

New Finding ◽

Degradation Characteristic ◽

Lifetime Model ◽

Thin Oxide

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A new off-state drain-bias TDDB lifetime model for DENMOS device

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173290 ◽

2009 ◽

Author(s):

S.W. Chang ◽

Chia Lin Chen ◽

C. J. Wang ◽

Kenneth Wu

Keyword(s):

Drain Bias ◽

Lifetime Model

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Surface Potential Control on Thin Oxide Films with Respect to Electron Stimulated Desorption Studies

Journal de Physique III ◽

10.1051/jp3:1995200 ◽

1995 ◽

Vol 5 (9) ◽

pp. 1407-1424 ◽

Cited By ~ 3

Author(s):

Marc Bernheim ◽

Gilles Rousse

Keyword(s):

Surface Potential ◽

Oxide Films ◽

Potential Control ◽

Thin Oxide Films ◽

Thin Oxide ◽

Electron Stimulated Desorption

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Development of Backside Scanning Capacitance Microscopy Technique for Advanced SOI Microprocessors

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0094 ◽

2006 ◽

Author(s):

Vinod Narang ◽

P. Muthu ◽

J.M. Chin ◽

Vanissa Lim

Keyword(s):

Plasma Etching ◽

Data Interpretation ◽

Parameters Optimization ◽

Scanning Capacitance Microscopy ◽

Microscopy Technique ◽

Thermal Oxide ◽

Specific Analysis ◽

Thin Oxide ◽

P Type ◽

Uv Ozone

Abstract Implant related issues are hard to detect with conventional techniques for advanced devices manufactured with deep sub-micron technology. This has led to introduction of site-specific analysis techniques. This paper presents the scanning capacitance microscopy (SCM) technique developed from backside of SOI devices for packaged products. The challenge from backside method includes sample preparation methodology to obtain a thin oxide layer of high quality, SCM parameters optimization and data interpretation. Optimization of plasma etching of buried oxide followed by a new method of growing thin oxide using UV/ozone is also presented. This oxidation method overcomes the limitations imposed due to packaged unit not being able to heat to high temperature for growing thermal oxide. Backside SCM successfully profiled both the n and p type dopants in both cache and core transistors.

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