A New Method for Failure Analysis with Probing System Based on Scanning Electron Microscope

2007 ◽  
Author(s):  
Takeshi Nokuo ◽  
Yoshiyuki Eto ◽  
Zane Marek
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
New Method ◽  
Scanning Electron

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

The Nano Membrane-Like Structure of the Precambrian Microfossils under Atomic Force Microscope (AFM)

2007 ◽  
Vol 121-123 ◽  
pp. 739-742 ◽  
Author(s):  
H.M. Chi ◽  
Z.D. Xiao ◽  
Xin Xing Xiao
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Atomic Force Microscope ◽  
Early Life ◽  
Three Dimensional ◽  
New Method ◽  
Subcellular Structure ◽  
Atomic Force ◽  
Fossil Embryos ◽  
Scanning Electron

Weng`an fauna in Guizhou, China provides a unique window for the evolution of the early life especially since the animal embryos and sponge is found there. Phosphatization makes the fossils preserve in details including cells and subcellular structure. Here we use atomic force microscope observing the surface of some three dimensional preserved embryo fossils and the ultra membrane-like structure is found under atomic force microscope (AFM) while such structure can`t be found under scanning electron microscope (SEM). The membrane-like structure is approximately 10nm in thickness which maybe one part of the fossil embryos or belong to another nano scale microfossils. Therefore, AFM provides a new method for the study of the ultra structure of the microfossils from Weng`an fauna.

Failure Analysis on Heating Surface Tube Crackof High Temperature Reheater in Station Boiler

2013 ◽  
Vol 804 ◽  
pp. 333-336
Author(s):  
Yun Jian Jiang ◽  
Xiang Feng Zheng ◽  
Rong Gang Xue ◽  
Guo Zhen Dong ◽  
Ji Feng Zhao ◽  
...  
Keyword(s):  
Residual Stress ◽  
Electron Microscope ◽  
High Temperature ◽  
Chemical Analysis ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Heating Surface ◽  
Welding Residual Stress ◽  
Microscope Analysis ◽  
Scanning Electron

Through methods, such as microscope analysis, chemical analysis, metallography examination and scanning electron microscope etc, the causes resulting in high temperature reheater tube cracking of station boiler have been analyzed. The result indicates the crack is reheat crack, and structure stress, higher hardness and excessive welding residual stress are the primary inducement of tube joint crack.

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