The Effect of Metal Area and Line Spacing on TDDB Characteristics of 45nm Low-k SiCOH Dielectrics

2007 ◽  
Author(s):  
F. Chen ◽  
P. McLaughlin ◽  
J. Gambino ◽  
E. Wu ◽  
J. Demarest ◽  
...  
Keyword(s):  
Line Spacing ◽  
Low K

Characterization and Integration in Cu Damascene Structures of AURORA, an Inorganic Low-k Dielectric

2000 ◽  
Vol 612 ◽  
Author(s):  
R. A. Donaton ◽  
B. Coenegrachts ◽  
E. Sleeckx ◽  
M. Schaekers ◽  
G. Sophie ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Pore Size ◽  
Carbon Concentration ◽  
Low Carbon ◽  
Small Pore Size ◽  
Damascene Process ◽  
Small Pore ◽  
Line Spacing ◽  
Low K

AbstractAURORA films, which have a Si-O-Si network with –CH3 terminations, were characterized and integrated into Cu single damascene structures. The relatively low carbon concentration (∼ 20%) and the very small pore size (∼ 0.6 nm) found could be advantageous during integration of AURORA. Integration of AURORA into Cu single damascene structures was successfully achieved. Suitable resist strip processes, which are critical for Si-O-C type materials, were developed, resulting in trenches with satisfactory profiles. After a complete single damascene process, a interline dielectric constant value of 2.7 was found for line spacing down to 0.25 µm.

Electron Probe Analysis of Vertebrate Smooth Muscle: Distribution of Ca and Ci

1976 ◽  
Vol 34 ◽  
pp. 334-335 ◽  
Author(s):  
Avril V. Somlyo ◽  
H. Shuman ◽  
A.P. Somlyo
Keyword(s):  
Smooth Muscle ◽  
Electron Probe ◽  
Preliminary Report ◽  
Cell Damage ◽  
Electron Probe Analysis ◽  
Perinuclear Space ◽  
Probe Analysis ◽  
High K ◽  
Low K ◽  
Initial Results

This is a preliminary report of electron probe analysis of rabbit portal-anterior mesenteric vein (PAMV) smooth muscle cryosectioned without fixation or cryoprotection. The instrumentation and method of electron probe quantitation used (1) and our initial results with cardiac (2) and skeletal (3) muscle have been presented elsewhere.In preparations depolarized with high K (K2SO4) solution, significant calcium peaks were detected over the sarcoplasmic reticulum (Fig 1 and 2) and the continuous perinuclear space. In some of the fibers there were also significant (up to 200 mM/kg dry wt) calcium peaks over the mitochondria. However, in smooth muscle that was not depolarized, high mitochondrial Ca was found in fibers that also contained elevated Na and low K (Fig 3). Therefore, the possibility that these Ca-loaded mitochondria are indicative of cell damage remains to be ruled out.

Deposition of Wave-shaped Layered Low-k Dielectric a-C:F Films by C8F18 Plasma CVD

2010 ◽  
Vol 130 (4) ◽  
pp. 319-324
Author(s):  
Kouichiro Mizuno ◽  
Hirotake Sugawara ◽  
Akihiro Murayama
Keyword(s):  
Plasma Cvd ◽  
Low K

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

An Overview of Cu Wire Intermetallic Compound Formation and a Corrosion Failure Mechanism

2012 ◽  
Author(s):  
Dongmei Meng ◽  
Laura Buck ◽  
James Cargo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Corrosion Mechanism ◽  
Fundamental Study ◽  
Corrosion Failure ◽  
Transmission Electron ◽  
Intermetallic Compound Formation ◽  
Scanning Transmission ◽  
Low K

Abstract Cu needs a higher level of ultrasound combined with bonding force to be bonded to the Al pad properly, not just because Cu is harder than Au, but it is also harder to initiate intermetallic compounds (IMC) formation during bonding. This increases the chances of damaging the metal/low k stack under the bondpad. This paper presents a fundamental study of IMC as well as one example of a failure mode of Cu/Al bonded devices, all based on detailed analysis using scanning electron microscopy, scanning transmission electron microscopy, energy dispersive spectrometers, and transmission electron microscopy. It presents a case study showing a corrosion mechanism of Cu/Al ballbond after 168hr UHAST stress. It is observed that all Cu9Al4 was consumed, while very little copper aluminide remained after 168 hours of UHAST stressing.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

Precision Xe Plasma FIB Delayering for Physical Failure Analysis of Sub-20 nm Microprocessor Devices

2017 ◽  
Author(s):  
D. Zudhistira ◽  
V. Viswanathan ◽  
V. Narang ◽  
J.M. Chin ◽  
S. Sharang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Dielectric Films ◽  
Planar Surface ◽  
Chemical Methods ◽  
Root Cause ◽  
Essential Step ◽  
Dielectric Layers ◽  
Wet Chemical ◽  
20 Nm ◽  
Low K

Abstract Deprocessing is an essential step in the physical failure analysis of ICs. Typically, this is accomplished by techniques such as wet chemical methods, RIE, and mechanical manual polishing. Manual polishing suffers from highly non-uniform delayering particularly for sub 20nm technologies due to aggressive back-end-of-line scaling and porous ultra low-k dielectric films. Recently gas assisted Xe plasma FIB has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. In this paper, the successful application of this technique to delayer sub-20 nm microprocessor chips with real defects to root cause the failure is presented.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

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