Mechanism of Gradual Increase of Gate Current in High-K Gate Dielectrics and Its Application to Reliability Assessment

2006 ◽  
Author(s):  
Kenji Okada ◽  
Tsuyoshi Horikawa ◽  
Hideki Satake ◽  
Hiroyuki Ota ◽  
Arito Ogawa ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Gradual Increase ◽  
Reliability Assessment ◽  
Gate Current ◽  
High K

A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme

2012 ◽  
Vol 187 ◽  
pp. 57-60 ◽  
Author(s):  
Guang Yaw Hwang ◽  
J.H. Liao ◽  
S.F. Tzou ◽  
Mark Lin ◽  
Autumn Yeh ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Gate Dielectrics ◽  
Semiconductor Industry ◽  
Wet Etching ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Current ◽  
Gate Electrodes ◽  
Polysilicon Gate ◽  
High K

Beginning at the 45nm node, the semiconductor industry is moving to high-k gate dielectrics and metal gate electrodes for CMOS logic devices [. Although different approaches of building these devices are being pursued, most of the industry has consolidated behind a gate last approach, in which the transistor is built around a dummy poly polysilicon gate, which is subsequently removed and replaced with a metal gate. Current approaches to removing the dummy poly gate include plasma-based dry processes and liquid-phase wet etching.

High K gate dielectrics for the silicon industry

2002 ◽  
Author(s):  
L. Manchanda ◽  
B. Busch ◽  
M.L. Green ◽  
M. Morris ◽  
R.B. van Dover ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
High K

Strategic Customization of Polymeric Nanocomposites Modified by 2D Titanium Oxide Nanosheet for High‐ k and Flexible Gate Dielectrics

Small ◽  
2021 ◽  
Vol 17 (17) ◽  
pp. 2007213
Author(s):  
Moonjeong Jang ◽  
Se Yeon Park ◽  
Seong Ku Kim ◽  
Dowon Jung ◽  
Wooseok Song ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Gate Dielectrics ◽  
Polymeric Nanocomposites ◽  
High K
Sign in / Sign up

Export Citation Format

Share Document