Analysis of the exponentially decaying transient current in MOS capacitors

2003 ◽  
Author(s):  
R.-I. Yamada ◽  
J. Yugami
Keyword(s):  
Transient Current ◽  
Mos Capacitors

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

2015 ◽  
Vol 62 (8) ◽  
pp. 2670-2674 ◽  
Author(s):  
Hamid Amini Moghadam ◽  
Sima Dimitrijev ◽  
Jisheng Han ◽  
Daniel Haasmann ◽  
Amirhossein Aminbeidokhti
Keyword(s):  
Current Method ◽  
Transient Current ◽  
Mos Capacitors ◽  
Oxide Traps

The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors

2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra
Keyword(s):  
Structural Properties ◽  
Electron Spectroscopy ◽  
Oxygen Diffusion ◽  
Gate Dielectric ◽  
Barrier Properties ◽  
Reaction Rates ◽  
Cross Sectional ◽  
Mos Capacitors ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.

scholarly journals Transient Current Density in a Pair of Long Parallel Conductors

2021 ◽  
Vol 11 (15) ◽  
pp. 6920
Author(s):  
Oldřich Coufal
Keyword(s):  
Steady State ◽  
Cross Section ◽  
Current Density ◽  
Circular Cross Section ◽  
Transient Current ◽  
Constant Current ◽  
Voltage Source ◽  
Sinusoidal Voltage ◽  
Steady State Current ◽  
Maximum Current

Two infinitely long parallel conductors of arbitrary cross section connected to a voltage source form a loop. If the source voltage depends on time, then due to induction there is no constant current density in the loop conductors. It is only recently that a method has been published for accurately calculating current density in a group of long parallel conductors. The method has thus far been applied to the calculation of steady-state current density in a loop connected to a sinusoidal voltage source. In the present article, the method is used for an accurate calculation of transient current using transient current density. The transient current is analysed when connecting and short-circuiting the sources of sinusoidal, constant and sawtooth voltages. For circular cross section conductors, the dependences of maximum current density, maximum current and the time of achieving steady state on the source frequency, the distance of the conductors and their resistivity when connecting the source of sinusoidal voltage are examined.

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