Investigation of gate to contact spacing effect on ESD robustness of salicided deep submicron single finger NMOS transistors

2003 ◽  
Author(s):  
Kwang-Hoon Oh ◽  
C. Duvvury ◽  
K. Banerjee ◽  
R.W. Dutton
Keyword(s):  
Spacing Effect ◽  
Deep Submicron ◽  
Single Finger ◽  
Nmos Transistors

Impact of gate-to-contact spacing on ESD performance of salicided deep submicron NMOS transistors

2002 ◽  
Vol 49 (12) ◽  
pp. 2183-2192 ◽  
Author(s):  
Kwang-Hoon Oh ◽  
C. Duvvury ◽  
K. Banerjee ◽  
R.W. Dutton
Keyword(s):  
Deep Submicron ◽  
Nmos Transistors

Performance analysis of 22 nm deep submicron NMOS transistors

2015 ◽  
Author(s):  
Kim Ho Yeap ◽  
Jor Gie Liew ◽  
Siu Hong Loh ◽  
Humaira Nisar ◽  
Zairi Ismael Rizman
Keyword(s):  
Performance Analysis ◽  
Deep Submicron ◽  
Nmos Transistors

Flicker noise in deep submicron nMOS transistors

2000 ◽  
Vol 44 (7) ◽  
pp. 1239-1245 ◽  
Author(s):  
N. Lukyanchikova ◽  
N. Garbar ◽  
M. Petrichuk ◽  
E. Simoen ◽  
C. Claeys
Keyword(s):  
Flicker Noise ◽  
Deep Submicron ◽  
Nmos Transistors

Analysis of nonuniform ESD current distribution in deep submicron NMOS transistors

2002 ◽  
Vol 49 (12) ◽  
pp. 2171-2182 ◽  
Author(s):  
Kwang-Hoon Oh ◽  
C. Duvvury ◽  
K. Banerjee ◽  
R.W. Dutton
Keyword(s):  
Current Distribution ◽  
Deep Submicron ◽  
Nmos Transistors

Limitations to the Spacing Effect

2005 ◽  
Vol 52 (4) ◽  
pp. 257-263 ◽  
Author(s):  
Peter P. J. L. Verkoeijen ◽  
Remy M. J. P. Rikers ◽  
Henk G. Schmidt
Keyword(s):  
Free Recall ◽  
Phase Retrieval ◽  
Incidental Learning ◽  
Factor Model ◽  
Recall Performance ◽  
Spacing Effect ◽  
Word List ◽  
Intentional Learning ◽  
Study Phase ◽  
Learning Condition

Abstract. The spacing effect refers to the finding that memory for repeated items improves when the interrepetition interval increases. To explain the spacing effect in free-recall tasks, a two-factor model has been put forward that combines mechanisms of contextual variability and study-phase retrieval (e.g., Raaijmakers, 2003 ; Verkoeijen, Rikers, & Schmidt, 2004 ). An important, yet untested, implication of this model is that free recall of repetitions should follow an inverted u-shaped relationship with interrepetition spacing. To demonstrate the suggested relationship an experiment was conducted. Participants studied a word list, consisting of items repeated at different interrepetition intervals, either under incidental or under intentional learning instructions. Subsequently, participants received a free-recall test. The results revealed an inverted u-shaped relationship between free recall and interrepetition spacing in both the incidental-learning condition and the intentional-learning condition. Moreover, for intentionally learned repetitions, the maximum free-recall performance was located at a longer interrepetition interval than for incidentally learned repetitions. These findings are interpreted in terms of the two-factor model of spacing effects in free-recall tasks.

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