Role of hydrogen anneal in thin gate oxide for multi-metal-layer CMOS process

2002 ◽  
Author(s):  
Y.-H. Lee ◽  
R. Nachman ◽  
K. Seshan ◽  
D.-C. Kau ◽  
N. Mielke
Keyword(s):  
Metal Layer ◽  
Gate Oxide ◽  
Cmos Process ◽  
Thin Gate Oxide

Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs

2002 ◽  
Vol 12 (3) ◽  
pp. 57-60 ◽  
Author(s):  
B. Cretu ◽  
F. Balestra ◽  
G. Ghibaudo ◽  
G. Guégan
Keyword(s):  
Low Temperature ◽  
Gate Oxide ◽  
Thin Gate Oxide

Effect of total ionizing dose radiation on the 0.25 μm RF PDSOI nMOSFETs with thin gate oxide

2009 ◽  
Vol 30 (1) ◽  
pp. 014004 ◽  
Author(s):  
Liu Mengxin ◽  
Han Zhengsheng ◽  
Bi Jinshun ◽  
Fan Xuemei ◽  
Liu Gang ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Total Ionizing Dose ◽  
Thin Gate Oxide ◽  
Dose Radiation

Highly Stable Ir-Ta-O Electrode for Ferroelectric Material Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Fengyan Zhang ◽  
Sheng Teng Hsu ◽  
Jer-shen Maa ◽  
Yoshi Ono ◽  
Ying Hong ◽  
...  
Keyword(s):  
High Temperature ◽  
Bottom Electrode ◽  
Temperature Stability ◽  
Gate Oxide ◽  
Ferroelectric Material ◽  
High Temperature Stability ◽  
Material Deposition ◽  
Long Time ◽  
The Stability ◽  
Thin Gate Oxide

AbstractIr-Ta-O composite bottom electrode has extraordinary high temperature stability. It can maintain good conductivity and integrity even after 5min annealing at 1000 °C in oxygen ambient. The thermal stability of Ir-Ta-O on different substrates has been studied. It shows that Ir-Ta-O is also very stable on Si and SiO2 substrates. No hillock formation and peelings of the bottom electrode were observed after high temperature and long time annealing in O2 ambient. SEM, TEM, XRD, and AES have been used to characterize the Ir-Ta-O film and the interfaces between Ir-Ta-O bottom electrode and Si or SiO2 substrate. The composition and conductivity changes of the electrode during oxygen ambient annealing and the interdiffusion issue will be discussed. Furthermore, Ir-Ta-O/SiO2/Si capacitor with 30Å gate oxide was fabricated and the C-V and I-V characteristics were measured to confirm the stability of Ir-Ta-O on thin gate oxide.

scholarly journals Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

2006 ◽  
Vol 46 (9-11) ◽  
pp. 1657-1663 ◽  
Author(s):  
J.M. Rafí ◽  
E. Simoen ◽  
K. Hayama ◽  
A. Mercha ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Drain Current ◽  
Gate Oxide ◽  
Floating Body ◽  
Hot Carrier ◽  
Thin Gate Oxide

Retarded Growth of Sputtered HfO2 Films on Germanium

2004 ◽  
Vol 811 ◽  
Author(s):  
Koji Kita ◽  
Masashi Sasagawa ◽  
Masahiro Toyama ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Film Growth ◽  
Early Stage ◽  
Gate Oxide ◽  
Interface Layer ◽  
Film Deposition ◽  
Si Substrate ◽  
Equivalent Thickness ◽  
Ternary Compounds ◽  
Si Substrates

ABSTRACTHfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

Sign in / Sign up

Export Citation Format

Share Document