Critical parameters for reliable surface mounting of high pincount packages

The article discusses possible forms of educational STEM projects in the field of electronics and device control using Arduino controllers. As you know, the implementation of such STEM projects can be carried out not only using various electronic constructors, but also using virtual modeling environments. The knowledge obtained during modeling in virtual environments makes it possible to increase the efficiency of face-to-face practical training with a real constructor, and to improve the quality of students’ knowledge. The use of virtual modeling environments in combination with the use of real constructors provides links between distance and full-time learning. A real constructors can be used simultaneously by both the teacher and the student, jointly practicing the features of solving practical problems. The article provides examples of using a virtual environment for preliminary prototyping of circuits available in the documentation for electronic constructors, to familiarize students with the basics of designing and assembling electronic circuits using the surface mounting method and on a breadboard, as well as programming controllers on the Arduino platform that control electronic devices. This approach allows students to accelerate the assimilation of various interdisciplinary knowledge in the field of natural sciences using STEM design.

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Multi-layer Tablets: Study of the Critical Parameters by a Compression Simulator

10.26226/morressier.57d6b2bdd462b8028d88db27 ◽

2016 ◽

Author(s):

Alessandra Rossi

Keyword(s):

Critical Parameters

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New Insights into the Nature of the Band Gap of CuGeO3 Nanoparticles: Synthesis, Electronic Structure, and Optical and Photocatalytic Properties

10.26434/chemrxiv.8362409.v1 ◽

2019 ◽

Author(s):

Victor Y. Suzuki ◽

Luís Henrique Cardozo Amorin ◽

Natália H. de Paula ◽

Anderson R. Albuquerque ◽

Julio Ricardo Sambrano ◽

...

Keyword(s):

Electronic Structure ◽

Band Gap ◽

Material Design ◽

Photocatalytic Properties ◽

Critical Parameters ◽

Synthetic Approach ◽

Microwave Assisted ◽

Theoretical Approaches ◽

Nanoparticles Synthesis ◽

First Time

We report, for the first time, new insights into the nature of the band gap of <a>CuGeO3 </a>(CGO) nanocrystals synthesized from a microwave-assisted hydrothermal method in the presence of citrate. To the best of our knowledge, this synthetic approach has the shortest reaction time and it works at the lowest temperatures reported in the literature for the preparation of these materials. The influence of the surfactant on the structural, electronic, optical, and photocatalytic properties of CGO nanocrystals is discussed by a combination of experimental and theoretical approaches, and that results elucidates the nature of the band gap of synthetized CGO nanocrystals. We believe that this particular strategy is one of the most critical parameters for the development of innovative applications and that result could shed some light on the emerging material design with entirely new properties.

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Fundamental Considerations for CDM Failure in 90nm Products

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0055 ◽

2006 ◽

Author(s):

Nobuyuki Wakai ◽

Yuji Kobira ◽

Hidemitsu Egawa ◽

Masayoshi Tsutsumi

Keyword(s):

Breakdown Voltage ◽

High Speed ◽

Gate Oxide ◽

Critical Parameters ◽

Protection Device ◽

Oxide Breakdown ◽

Technology Products ◽

Charged Device ◽

Device Size ◽

Fundamental Consideration

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.

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