Degradation of single-quantum well InGaN green light emitting diodes under high electrical stress

1998 ◽  
Author(s):  
D.L. Barton ◽  
M. Osinski ◽  
P. Perlin ◽  
P.G. Eliseev ◽  
J. Lee
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Electrical Stress

Degradation of Single-Quantum Well InGaN Green Light Emitting Diodes Under High Electrical Stress

1996 ◽  
Vol 449 ◽  
Author(s):  
Marek Osiński ◽  
Piotr Perlin ◽  
Ptr G Eliseev ◽  
Gungtan Liu ◽  
Daniel L Barton
Keyword(s):  
Quantum Well ◽  
Failure Analysis ◽  
Light Emitting Diodes ◽  
Pulse Length ◽  
Green Light ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Rapid Degradation ◽  
Light Emitting ◽  
Electrical Stress

ABSTRACTWe performed a degradation study of high-brightness Nichia single-quantum well AlGaN/InGaN/GaN green light-emitting diodes (LEDs). The devices were subjected to high current electrical stress with current pulse amplitudes between 1 A and 7 A and voltages between 10 V and 70 V with a pulse length of 100 ns and a repetition rate of 1 kHz. The study showed that when the current amplitude was increased to the 6 A - 7.5 A range, a fast (about 1 s) degradation occurred, with a visible discharge between the p and n-type electrodes. Subsequent failure analysis revealed severe damage to metal contacts which lead to the formation of shorts in the surface plane of diode. For currents smaller than 6 A, a slow degradation was observed as a decrease in optical power and an increase in the reverse current leakage. After between 24 and 100 hours however, a rapid degradation occurred which was similar to the rapid degradation observed at higher currents. Failure analysis results suggest that carbonization of the plastic encapsulation material on the diode surface leads to the discharge which destroys the diode.

Effects of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting diodes

1998 ◽  
Vol 189-190 ◽  
pp. 808-811 ◽  
Author(s):  
Marek Osiński ◽  
Daniel L Barton ◽  
Piotr Perlin ◽  
Jinhyun Lee
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Electrical Stress

Single-quantum well InGaN green light emitting diode degradation under high electrical stress

1999 ◽  
Vol 39 (8) ◽  
pp. 1219-1227 ◽  
Author(s):  
Daniel L. Barton ◽  
Marek Osinski ◽  
Piotr Perlin ◽  
Petr G. Eliseev ◽  
Jinhyun Lee
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Green Light ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Electrical Stress

Current-modulated electroluminescence spectroscopy and its application to InGaN single-quantum-well blue and green light-emitting diodes

2001 ◽  
Vol 79 (8) ◽  
pp. 1100-1102 ◽  
Author(s):  
Takashi Azuhata ◽  
Takefumi Homma ◽  
Yoshikazu Ishikawa ◽  
Shigefusa F. Chichibu ◽  
Takayuki Sota ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting

Optical and Electrical Characteristics of Single-Quantum-Well InGaN Light-Emitting Diodes

1996 ◽  
Vol 449 ◽  
Author(s):  
Piotr Perlin ◽  
Marek Osiński ◽  
Petr G Eliseev
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Energy Gap ◽  
Green Light ◽  
Temperature Shift ◽  
Blue Shift ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Increasing Temperature

ABSTRACTWe have studied the electroluminescence and photoluminescence of Nichia single-quantum-well Al0.2Ga0.8N/In0.45Ga0.55N/GaN green light-emitting diodes over a broad range of temperatures (15-300 K) and currents (0.2 μA - 2 A). The most striking behavior is an anomalous temperature shift of both photo- and electroluminescence, with the emission peak moving towards higher energies with increasing temperature. This blue shift is opposite to that of the energy gap of the active layer, which practically excludes interband transitions as responsible for the observed optical transitions. We suggest that population effects within the band tails can account for the observed anomaly. We also determined that the current flowing through the p-n junction is dominated by carrier tunneling, the omnipresent effect in the GaN-based optoelectronic devices.

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

2010 ◽  
Vol 3 (12) ◽  
pp. 122102 ◽  
Author(s):  
Shuichiro Yamamoto ◽  
Yuji Zhao ◽  
Chih-Chien Pan ◽  
Roy B. Chung ◽  
Kenji Fujito ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting

Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III–Nitride Light-Emitting Diodes

2013 ◽  
Vol 6 (5) ◽  
pp. 052103 ◽  
Author(s):  
Yoshinobu Kawaguchi ◽  
Shih-Chieh Huang ◽  
Robert M. Farrell ◽  
Yuji Zhao ◽  
James S. Speck ◽  
...  
Keyword(s):  
Quantum Well ◽  
Crystallographic Orientation ◽  
Light Emitting Diodes ◽  
Emission Wavelength ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting

Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

2002 ◽  
Vol 81 (16) ◽  
pp. 2938-2940 ◽  
Author(s):  
A. Chitnis ◽  
R. Pachipulusu ◽  
V. Mandavilli ◽  
M. Shatalov ◽  
E. Kuokstis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Single Quantum ◽  
Ultraviolet Emission ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Deep Ultraviolet Emission

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

2012 ◽  
Vol 5 (6) ◽  
pp. 062103 ◽  
Author(s):  
Chih-Chien Pan ◽  
Shinichi Tanaka ◽  
Feng Wu ◽  
Yuji Zhao ◽  
James S. Speck ◽  
...  
Keyword(s):  
Quantum Well ◽  
Blue Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Low Efficiency
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