REDR-based kinetics for line defects leading to sudden failures in 980 nm SL SQW InGaAs laser diodes

1998 ◽  
Author(s):  
A. Bonfiglio ◽  
M.B. Casu ◽  
M. Vanzi ◽  
F. Magistrali ◽  
M. Maini ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Line Defects

Strain-Relieved Reliable Lasers Grown on Si By MOCVD

1992 ◽  
Vol 281 ◽  
Author(s):  
Takashi Egawa ◽  
Yoshiaki Hasegawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Intermediate Layer ◽  
Defect Formation ◽  
Laser Diodes ◽  
Electrical Characteristics ◽  
Line Defect ◽  
Dark Line ◽  
Si Substrates ◽  
Forward Current ◽  
Current Voltage ◽  
Line Defects

ABSTRACTConventional GaAs-based laser diodes grown on Si substrates suffer from rapid degradation, which results from the deteriorations of optical and electrical characteristics. Electroluminescence observation shows that the optical deterioration is caused by the formation of dark-line defects. The current-voltage (I-V) characteristic of the p-n junction is degraded with aging, and results in an ohmic-like under a higher ambient temperature and a larger forward current. The deterioration of the I-V characteristic is caused by defect-accelerated impurity diffusion because the growth of GaAs on Si substrates (GaAs/Si) involves the high dislocation density, the large tensile stress and the large amount of Si near the GaAs/Si interface. A significant improvement in reliability has been achieved in the strain-relieved AlGaAs/InGaAs laser diode on Si grown with the InGaAs intermediate layer. The stress relief by the InGaAs active layer and the reduction of the dark-line defect formation by the InGaAs intermediate layer are required to fabricate reliable GaAs-based laser diodes on Si substrates.

scholarly journals Electron Beam Induced Current Characterization of Dark Line Defects in Failed and Degraded High Power Quantum Well Laser Diodes

2010 ◽  
Vol 16 (S2) ◽  
pp. 794-795
Author(s):  
M Mason ◽  
N Presser ◽  
Y Sin ◽  
B Foran ◽  
SC Moss
Keyword(s):  
Electron Beam ◽  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Induced Current ◽  
Dark Line ◽  
Quantum Well Laser ◽  
Line Defects ◽  
Electron Beam Induced Current

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes

2006 ◽  
Vol 89 (10) ◽  
pp. 101111 ◽  
Author(s):  
M. Bou Sanayeh ◽  
A. Jaeger ◽  
W. Schmid ◽  
S. Tautz ◽  
P. Brick ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Broad Area ◽  
Dark Line ◽  
Optical Damage ◽  
Line Defects ◽  
Dark Line Defects

Spectral shifts associated with dark line defects in degraded II-VI laser diodes

1998 ◽  
Vol 72 (14) ◽  
pp. 1754-1756 ◽  
Author(s):  
L.-L. Chao ◽  
G. S. Cargill ◽  
T. Marshall ◽  
E. Snoeks ◽  
J. Petruzzello ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Dark Line ◽  
Spectral Shifts ◽  
Line Defects ◽  
Dark Line Defects

Defects in Crystals

1968 ◽  
Vol 26 ◽  
pp. 244-245
Author(s):  
Kenneth R. Lawless
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Surface Defects ◽  
Chemical Properties ◽  
Material Point ◽  
Crystal Defects ◽  
Defects In Crystals ◽  
Irradiation Effects ◽  
Normal Lattice ◽  
Line Defects

One of the most important applications of the electron microscope in recent years has been to the observation of defects in crystals. Replica techniques have been widely utilized for many years for the observation of surface defects, but more recently the most striking use of the electron microscope has been for the direct observation of internal defects in crystals, utilizing the transmission of electrons through thin samples.Defects in crystals may be classified basically as point defects, line defects, and planar defects, all of which play an important role in determining the physical or chemical properties of a material. Point defects are of two types, either vacancies where individual atoms are missing from lattice sites, or interstitials where an atom is situated in between normal lattice sites. The so-called point defects most commonly observed are actually aggregates of either vacancies or interstitials. Details of crystal defects of this type are considered in the special session on “Irradiation Effects in Materials” and will not be considered in detail in this session.

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