Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes

2006 ◽  
Vol 89 (10) ◽  
pp. 101111 ◽  
Author(s):  
M. Bou Sanayeh ◽  
A. Jaeger ◽  
W. Schmid ◽  
S. Tautz ◽  
P. Brick ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Broad Area ◽  
Dark Line ◽  
Optical Damage ◽  
Line Defects ◽  
Dark Line Defects

Spectral shifts associated with dark line defects in degraded II-VI laser diodes

1998 ◽  
Vol 72 (14) ◽  
pp. 1754-1756 ◽  
Author(s):  
L.-L. Chao ◽  
G. S. Cargill ◽  
T. Marshall ◽  
E. Snoeks ◽  
J. Petruzzello ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Dark Line ◽  
Spectral Shifts ◽  
Line Defects ◽  
Dark Line Defects

Growth mechanism of <100> dark-line defects in high radiance GaAlAs LED's

1978 ◽  
Author(s):  
S. Yamakoshi ◽  
T. Sugahara ◽  
O. Hasegawa ◽  
Y. Toyama ◽  
H. Takanashi
Keyword(s):  
Growth Mechanism ◽  
Dark Line ◽  
Line Defects ◽  
Dark Line Defects

Catastrophic Optical-damage in High-power, Broad-area Laser-diodes

2009 ◽  
Vol 1195 ◽  
Author(s):  
Aland K. Chin ◽  
Rick K. Bertaska ◽  
Martin A. Jaspan ◽  
Allen M. Flusberg ◽  
Steve D. Swartz ◽  
...  
Keyword(s):  
Cavity Length ◽  
Ring Cavity ◽  
Laser Diodes ◽  
Optical Power ◽  
Transverse Mode ◽  
Broad Area ◽  
Optical Damage ◽  
Double Heterostructure ◽  
Transverse Modes ◽  
Optical Power Density

AbstractA detailed description of the phenomenon of catastrophic optical-damage (COD) in short (380μm cavity-length), 12μm aperture, proton-bombarded, double-heterostructure laser-diodes with uncoated facets was first presented in 1974. In these devices, COD generally initiates at the facets due to high optical-power density and propagate along transverse-mode filaments. To achieve reliable operation at high optical-power, broad-area laser-diodes have evolved to long (several-millimeter cavity-length), wide-aperture (50-200μm), dielectric-defined, broadened-waveguide, separate-confinement, double-heterostructure, quantum-well laser-diodes with coated, passivated facets. COD in these devices involve both transverse modes and ring-cavity modes.

Observation of dark line defects in InGaAs/GaAs strained layer superlattices by photoluminescence topography

1991 ◽  
Vol 111 (1-4) ◽  
pp. 429-433 ◽  
Author(s):  
Kanji Iizuka ◽  
Takashi Yoshida ◽  
Toshimasa Suzuki ◽  
Haruo Hirose
Keyword(s):  
Dark Line ◽  
Strained Layer ◽  
Line Defects ◽  
Strained Layer Superlattices ◽  
Dark Line Defects

Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates

1995 ◽  
Vol 34 (Part 1, No. 6A) ◽  
pp. 2994-2999 ◽  
Author(s):  
Yoshiaki Hasegawa ◽  
TakashiEgawa ◽  
Takashi Jimbo ◽  
MasayoshiUmeno
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Dark Line ◽  
Si Substrates ◽  
Line Defects ◽  
Dark Line Defects
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