A 1-8 GHz MMIC down-conversion mixer with input/output active baluns using SiGe HBT process

2005 ◽  
Author(s):  
Sang-Heung Lee ◽  
Ja-Yol Lee ◽  
Seung-Yun Lee ◽  
Chan Woo Park ◽  
Jin-Yeong Kang
Keyword(s):  
Input Output ◽  
Sige Hbt ◽  
Down Conversion

Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology

2015 ◽  
Vol 62 (6) ◽  
pp. 2657-2665 ◽  
Author(s):  
Saeed Zeinolabedinzadeh ◽  
Ickhyun Song ◽  
Uppili S. Raghunathan ◽  
Nelson E. Lourenco ◽  
Zachary E. Fleetwood ◽  
...  
Keyword(s):  
Single Event ◽  
Single Event Effects ◽  
Sige Hbt ◽  
W Band ◽  
Down Conversion

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Input-Output in Personnel Management

1970 ◽  
Vol 15 (2) ◽  
pp. 115, 118
Author(s):  
WILLIAM E. COLEMAN
Keyword(s):  
Personnel Management ◽  
Input Output

Invited PaperTemperature dependence of SiGe HBT static and dynamic characteristics

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-81-Pr3-86
Author(s):  
F. Aniel ◽  
N. Zerounian ◽  
A. Gruhle ◽  
C. Mähner ◽  
G. Vernet ◽  
...  
Keyword(s):  
Dynamic Characteristics ◽  
Static And Dynamic Characteristics ◽  
Sige Hbt

Adaptive Control Scheme for Coupled Tank Process

2018 ◽  
pp. 89-95
Author(s):  
Vinodhini M.
Keyword(s):  
Adaptive Control ◽  
Nonlinear Behaviour ◽  
Simulation Studies ◽  
Input Output ◽  
Control Scheme ◽  
Direct Model ◽  
Multivariable Process ◽  
Model Reference Adaptive ◽  
Siso System ◽  
Adaptive Control Scheme

The objective of this paper is to develop a Direct Model Reference Adaptive Control (DMRAC) algorithm for a MIMO process by extending the MIT rule adopted for a SISO system. The controller thus developed is implemented on Laboratory interacting coupled tank process through simulation. This can be regarded as the relevant process control in petrol and chemical industries. These industries involve controlling the liquid level and the flow rate in the presence of nonlinearity and disturbance which justifies the use of adaptive techniques such as DMRAC control scheme. For this purpose, mathematical models are obtained for each of the input-output combinations using white box approach and the respective controllers are developed. A detailed analysis on the performance of the chosen process with these controllers is carried out. Simulation studies reveal the effectiveness of proposed controller for multivariable process that exhibits nonlinear behaviour.

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