Simulation analysis of heavy-ion-induced charge collection between nanoscale bulk-Si FinFET and conventional planar device

2016 ◽  
Author(s):  
Yu Junting ◽  
Chen Shuming ◽  
Chen Jianjun ◽  
Huang Pengcheng
Keyword(s):  
Simulation Analysis ◽  
Heavy Ion ◽  
Charge Collection ◽  
Planar Device ◽  
Induced Charge

Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

2011 ◽  
Vol 58 (6) ◽  
pp. 2563-2569 ◽  
Author(s):  
F. El-Mamouni ◽  
E. X. Zhang ◽  
N. D. Pate ◽  
N. Hooten ◽  
R. D. Schrimpf ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Charge Collection ◽  
Induced Charge

Analysis of heavy-ion induced charge collection mechanisms in SOI circuits

2004 ◽  
Vol 48 (6) ◽  
pp. 1027-1044 ◽  
Author(s):  
J.R Schwank ◽  
V Ferlet-Cavrois ◽  
P.E Dodd ◽  
M.R Shaneyfelt ◽  
G Vizkelethy ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Charge Collection ◽  
Induced Charge

Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

2016 ◽  
Vol 858 ◽  
pp. 753-756
Author(s):  
Takahiro Makino ◽  
Shinobu Onoda ◽  
Norihiro Hoshino ◽  
Hidekazu Tsuchida ◽  
Takeshi Ohshima
Keyword(s):  
Schottky Barrier ◽  
Epitaxial Layer ◽  
Impact Ionization ◽  
Ion Irradiation ◽  
Single Species ◽  
Heavy Ion ◽  
Charge Collection ◽  
Lead Ion ◽  
Induced Charge ◽  
The Impact

The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement.

Heavy ion-induced charge collection mechanisms in CMOS active pixel sensor

2002 ◽  
Vol 49 (6) ◽  
pp. 2836-2843 ◽  
Author(s):  
X. Belredon ◽  
J. David ◽  
D. Lewis ◽  
T. Beauchene ◽  
V. Pouget ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Charge Collection ◽  
Active Pixel Sensor ◽  
Active Pixel ◽  
Induced Charge

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel $p{\rm MOSFETs}$

2014 ◽  
Vol 61 (6) ◽  
pp. 3187-3192 ◽  
Author(s):  
En Xia Zhang ◽  
Isaak K. Samsel ◽  
Nicholas C. Hooten ◽  
William G. Bennett ◽  
Erik D. Funkhouser ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Charge Collection ◽  
Induced Charge

Scanning picosecond tunable laser system for simulating MeV heavy ion-induced charge collection events as a function of temperature

2008 ◽  
Vol 79 (8) ◽  
pp. 083705 ◽  
Author(s):  
Jamie Stuart Laird ◽  
Yuan Chen ◽  
Leif Scheick ◽  
Tuan Vo ◽  
Allan Johnston
Keyword(s):  
Laser System ◽  
Tunable Laser ◽  
Heavy Ion ◽  
Charge Collection ◽  
Induced Charge

Three-dimensional Simulation of heavy-ion induced charge collection in SiGe HBTs on SOI

2004 ◽  
Vol 51 (6) ◽  
pp. 3298-3303 ◽  
Author(s):  
M. Varadharajaperumal ◽  
Guofu Niu ◽  
J.D. Cressler ◽  
R.A. Reed ◽  
P.W. Marshall
Keyword(s):  
Three Dimensional ◽  
Heavy Ion ◽  
Charge Collection ◽  
Induced Charge ◽  
Dimensional Simulation

Observation of single-ion induced charge collection in diode by a heavy ion microbeam system

2003 ◽  
Vol 210 ◽  
pp. 206-210 ◽  
Author(s):  
Tomihiro Kamiya ◽  
Masakazu Oikawa ◽  
Takeshi Ohshima ◽  
Toshio Hirao ◽  
Kin Kiong Lee ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Charge Collection ◽  
Induced Charge
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