scholarly journals 3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor

2013 ◽  
Vol 62 (4) ◽  
pp. 048501
Author(s):  
Zhang Jin-Xin ◽  
Guo Hong-Xia ◽  
Guo Qi ◽  
Wen Lin ◽  
Cui Jiang-Wei ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
3D Simulation ◽  
Charge Collection ◽  
Single Event ◽  
Single Event Effects ◽  
Induced Charge

3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment

2015 ◽  
Vol 55 (8) ◽  
pp. 1180-1186 ◽  
Author(s):  
Jin-xin Zhang ◽  
Chao-hui He ◽  
Hong-xia Guo ◽  
Du Tang ◽  
Cen Xiong ◽  
...  
Keyword(s):  
Simulation Study ◽  
Extreme Environment ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Single Event ◽  
Single Event Effects

scholarly journals The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 440
Author(s):  
Yanan Liang ◽  
Rui Chen ◽  
Jianwei Han ◽  
Xuan Wang ◽  
Qian Chen ◽  
...  
Keyword(s):  
Low Voltage ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Track Length ◽  
Single Event ◽  
Single Event Effects ◽  
Heavy Ion Irradiation ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Tcad Simulation

An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

Proton, Electron, and Heavy Ion Single Event Effects on the HAS2 CMOS Image Sensor

2014 ◽  
Vol 61 (4) ◽  
pp. 1909-1917 ◽  
Author(s):  
Matthieu Beaumel ◽  
Dominique Herve ◽  
Dirk Van Aken ◽  
Pierre Pourrouquet ◽  
Marc Poizat
Keyword(s):  
Cmos Image Sensor ◽  
Heavy Ion ◽  
Image Sensor ◽  
Single Event ◽  
Single Event Effects

Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

2019 ◽  
Vol 30 (5) ◽  
Author(s):  
Chang Cai ◽  
Tian-Qi Liu ◽  
Xiao-Yuan Li ◽  
Jie Liu ◽  
Zhan-Gang Zhang ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Single Event ◽  
Single Event Effects

Diagnose of radiation induced single event effects in a PLL using a heavy ion microbeam

2013 ◽  
Author(s):  
Santiago Sondon ◽  
Alfredo Falcon ◽  
Pablo Mandolesi ◽  
Pedro Julian ◽  
Nahuel Vega ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Single Event ◽  
Single Event Effects ◽  
Radiation Induced
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