Total dose and single event testing of the Intersil ISL70227RH low-noise operational amplifier

2011 ◽  
Author(s):  
N. W. van Vonno ◽  
L. G. Pearce ◽  
R. Hood ◽  
E. T. Thomson ◽  
T. M. Bernard ◽  
...  
Keyword(s):  
Total Dose ◽  
Operational Amplifier ◽  
Low Noise ◽  
Single Event

(Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC

2021 ◽  
Vol 104 (7) ◽  
pp. 13-34
Author(s):  
Ani Khachatrian ◽  
Adrian Ildefonso ◽  
Zahabul Islam ◽  
Md Abu Jafar Rasel ◽  
Amanul Haque ◽  
...  
Keyword(s):  
Total Dose ◽  
Radiation Damage ◽  
Single Event ◽  
Single Event Upsets ◽  
Dose Effects ◽  
Total Dose Effects

Total-dose and single-event effects in DC/DC converter control circuitry

2003 ◽  
Vol 50 (6) ◽  
pp. 1867-1872 ◽  
Author(s):  
P.C. Adell ◽  
R.D. Schrimpf ◽  
W.T. Holman ◽  
J. Boch ◽  
J. Stacey ◽  
...  
Keyword(s):  
Total Dose ◽  
Single Event ◽  
Single Event Effects

scholarly journals Single Event Effect Analysis of SiGe Low Noise Amplifier

2021 ◽  
Vol 25 (2) ◽  
pp. 57-64
Author(s):  
Manel Bouhouche ◽  
◽  
Saida Latreche ◽  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Low Noise ◽  
Operating Conditions ◽  
Low Noise Amplifier ◽  
Radiation Tolerance ◽  
Single Event ◽  
Effect Analysis ◽  
Sige Hbt ◽  
High Let ◽  
Noise Amplifier

This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT). To verify the radiation tolerance of the proposed LNA, a total of four cascode configurations were designed. Comprehensive mixed-mode simulations were performed to evaluate the SET susceptibility of considered LNA cascode configurations, and we have analyzed how the strike parameters affect their output response. In this fact the strike position, linear energy transfer (LET), and track radius, were varied, and the resulting transients were compared for the different LNA configurations. Through this study, the potential capability of the inverse mode SiGe heterojunction bipolar transistor (HBT) in LNA radiation tolerance was confirmed for various strike operating conditions. It has been demonstrated that the single event sensitivity was reduced for LNA employing inverse mode SiGe HBT for strike device. The strike influence on the different LNA configurations response depends on strike LET, where a reduced SET variation is observed for high LET.

scholarly journals Qualification of Operational Amplifier used in Satellite Subsystem using Picosecond Pulsed Laser System

2020 ◽  
Vol 9 (2) ◽  
pp. 523-527
Keyword(s):  
Cross Section ◽  
Operational Amplifier ◽  
Second Harmonic ◽  
Laser System ◽  
Threshold Energy ◽  
Pulsed Laser ◽  
Spot Size ◽  
Single Event ◽  
532 Nm ◽  
Pulsed Laser Irradiation

Picosecond Pulsed Laser System (PPLS) was used to simulate the single event effects (SEE) on satellite electronic components. Single event transients effect induced in an operational amplifier (LM324) to determine how transient amplitude and charge collection varied with pulsed laser energies. The wavelength and the focused spot size are the primary factors generating the resultant charge density profile. The degradation performance of LM324 induced by pulsed laser irradiation with two wavelength (1064nm, 532nm) is determined as a function of laser cross section. The transient voltage changed due to pulsed laser hitting specific transistors. This research shows the sensitivity mapping of LM324 under the effect of fundamental and second harmonic wavelengths. Determine the threshold energy of the SET in both wavelength, and compare the laser cross section of 1064 nm beam and 532 nm beam.

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