Fixed charge density in silicon nitride films on crystalline silicon surfaces under illumination

2003 ◽  
Author(s):  
S. Dauwe ◽  
J. Schmidt ◽  
A. Metz ◽  
R. Hezel
Keyword(s):  
Silicon Nitride ◽  
Charge Density ◽  
Crystalline Silicon ◽  
Fixed Charge ◽  
Silicon Surfaces ◽  
Fixed Charge Density ◽  
Silicon Nitride Films

Oxygen and Nitrogen Incorporation During Cw Laser Recrystallization of Polysilicon

1982 ◽  
Vol 13 ◽  
Author(s):  
C.I. Drowley ◽  
T.I. Kamins
Keyword(s):  
Silicon Nitride ◽  
Ion Implantation ◽  
Charge Density ◽  
Fixed Charge ◽  
Nitrogen Level ◽  
Fixed Charge Density ◽  
Capping Layer ◽  
Nitrogen Incorporation ◽  
Cw Laser ◽  
Laser Recrystallization

ABSTRACTThe incorporation of nitrogen and oxygen in polysilicon has been examined by SIMS. The analysis, combined with C-V measurements and ion implantation, has been used to correlate the incorporation of the two species with the fixedcharge density at the back polysilicon/Si02 interface. Laser recrystallization with a silicon-nitride encapsulation layer results in the inclusion of 2–4 × 1017 cm−3 nitrogen atoms in the polysilicon; if an oxide capping layer is used, the nitrogen level observed is at the background of the SIMS system (~1015cm−3). Either type of capping layer results in 3−4×1018cm−3 oxygen atoms being incorporated into the polysilicon. Implantation of nitrogen into the polysilicon before recrystallization increases the fixed-charge density Nf,b) at the back interface, while implanted oxygen decreases Nf, b. The high Nf, b found with a nitride capping layer is attributed to deposition of nitrogen or SiNx at the back interface.

Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis

2005 ◽  
Vol 483-485 ◽  
pp. 589-592 ◽  
Author(s):  
Kevin Matocha ◽  
Jesse B. Tucker ◽  
Ed Kaminsky
Keyword(s):  
Silicon Nitride ◽  
Charge Density ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Fixed Charge ◽  
Fixed Charge Density ◽  
Class Ab ◽  
Power Added Efficiency ◽  
Thermal Oxide ◽  
Trapped Charge

Different SiC thermal oxide passivation techniques were characterized using UV-induced hysteresis to estimate the fixed charge, Qf, and interface-trapped charge, Qit. Steam-grown oxides have a fixed charge density of Qf=-1x1012 cm-2, and a net interface-trapped charge density of Qit=4x1011cm-2. Addition of a thin low-pressure chemical-vapor deposited (LPCVD) silicon nitride layer decreased these parameters to Qf=-2x1011 cm-2 and Qit=4x1010 cm-2. Dry oxide shows a fixed charge density, Qf=-3x1012 cm-2 and interface-trapped charge density, Qit=4x1011 cm-2 which changes to Qf=+7x1010 cm-2 and Qit=1x1010 cm-2 with the addition of a LPCVD silicon nitride cap. Dry thermal oxide with a silicon nitride cap was used to passivate SiC MESFETs to achieve a power-added efficiency of 60% in pulsed operation at 3 GHz in Class AB bias conditions.

scholarly journals Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

APL Materials ◽  
2014 ◽  
Vol 2 (9) ◽  
pp. 092504 ◽  
Author(s):  
Kevin Chen ◽  
Daisuke Kiriya ◽  
Mark Hettick ◽  
Mahmut Tosun ◽  
Tae-Jun Ha ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Charge Density ◽  
Fixed Charge ◽  
Fixed Charge Density ◽  
N Doping

scholarly journals 23Na MRI accurately measures fixed charge density in articular cartilage

2002 ◽  
Vol 47 (2) ◽  
pp. 284-291 ◽  
Author(s):  
Erik M. Shapiro ◽  
Arijitt Borthakur ◽  
Alexander Gougoutas ◽  
Ravinder Reddy
Keyword(s):  
Articular Cartilage ◽  
Charge Density ◽  
Fixed Charge ◽  
Fixed Charge Density ◽  
23Na Mri

Fixed charge density and cartilage biomechanics

2002 ◽  
pp. 387-395
Author(s):  
Robert J. Wilkins ◽  
Bethan Hopewell ◽  
Jill P. G. Urban
Keyword(s):  
Charge Density ◽  
Fixed Charge ◽  
Fixed Charge Density ◽  
Cartilage Biomechanics ◽  
And Cartilage

Electrophysiology of renal capillary membranes: gel concept applied and Starling model challenged

1988 ◽  
Vol 254 (3) ◽  
pp. F364-F373 ◽  
Author(s):  
M. Wolgast ◽  
G. Ojteg
Keyword(s):  
Charge Density ◽  
Electrical Potential ◽  
Potential Gradient ◽  
Swelling Pressure ◽  
Porous Membrane ◽  
Fixed Charge ◽  
Fixed Charge Density ◽  
Capillary Membranes ◽  
External Forces ◽  
Gel Membranes

In the classical Starling model the hydrostatic pressure in the pores is generally lower than that in capillary plasma, a phenomenon that necessitates the assumption of a rigid porous membrane. In flexible gel membranes, the capillary pressure is suggested to be balanced by a gel swelling pressure generated by negative fixed charges. Regarding the fluid transfer, the transmembranous electrical potential gradient will generate a net driving electroosmotic force. This force will be numerically similar to the net driving Starling force in small pores, but distinctly different in large pores. From previous data on the hydrostatic and colloid osmotic forces, the fixed charge density at the two interfaces of 1) the glomerular and 2) the peritubular capillary membrane were calculated and used to predict the flux of a series of charged protein probes. The close fit to the experimental data in both the capillary beds is in line with the gel concept presented. The gel concept (but hardly a rigid membrane) explains the ability of capillary membranes to alter their permeability in response to external forces. Gel membranes can furthermore be predicted to have a self-rinsing ability, as entrapped proteins will increase the local fixed charge density, leading to fluid entry into the region between the particle and the pore rim, which by consequent widening of the channel will facilitate extrusion of trapped proteins.

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