Modulating the fixed charge density in silicon nitride films while monitoring the surface recombination velocity by photoluminescence imaging

2015 ◽  
Vol 106 (14) ◽  
pp. 143505 ◽  
Author(s):  
Molly Bazilchuk ◽  
Halvard Haug ◽  
Erik Stensrud Marstein
Keyword(s):  
Silicon Nitride ◽  
Charge Density ◽  
Surface Recombination ◽  
Fixed Charge ◽  
Surface Recombination Velocity ◽  
Fixed Charge Density ◽  
Silicon Nitride Films ◽  
Recombination Velocity

scholarly journals High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx

Sensors ◽  
2021 ◽  
Vol 21 (23) ◽  
pp. 7807
Author(s):  
Ozhan Koybasi ◽  
Ørnulf Nordseth ◽  
Trinh Tran ◽  
Marco Povoli ◽  
Mauro Rajteri ◽  
...  
Keyword(s):  
Charge Density ◽  
Light Trap ◽  
Film Deposition ◽  
Fixed Charge ◽  
Surface Recombination Velocity ◽  
Limiting Factor ◽  
High Quantum Efficiency ◽  
Effective Lifetime ◽  
Fixed Charge Density ◽  
Thermally Grown

We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO2 and plasma-enhanced chemical vapor deposited (PECVD) SiNx thin films that show a record high quantum efficiency. We investigated PECVD SiNx passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon–dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance. Subsequently, the surface recombination velocity, which is the limiting factor for internal quantum deficiency (IQD), was obtained for different film depositions via 2D simulations where the measured effective lifetime, fixed charge density, and substrate parameters were used as input. The quantum deficiency of induced-junction photodiodes that would be fabricated with a surface passivation of given characteristics was then estimated using improved 3D simulation models. A batch of induced-junction photodiodes was fabricated based on the passivation optimizations performed on test samples and predictions of simulations. Photodiodes passivated with PECVD SiNx film as well as with a stack of thermally grown SiO2 and PECVD SiNx films were fabricated. The photodiodes were assembled as light-trap detector with 7-reflections and their efficiency was tested with respect to a reference Predictable Quantum Efficient Detector (PQED) of known external quantum deficiency. The preliminary measurement results show that PQEDs based on our improved photodiodes passivated with stack of SiO2/SiNx have negligible quantum deficiencies with IQDs down to 1 ppm within 30 ppm measurement uncertainty.

Oxygen and Nitrogen Incorporation During Cw Laser Recrystallization of Polysilicon

1982 ◽  
Vol 13 ◽  
Author(s):  
C.I. Drowley ◽  
T.I. Kamins
Keyword(s):  
Silicon Nitride ◽  
Ion Implantation ◽  
Charge Density ◽  
Fixed Charge ◽  
Nitrogen Level ◽  
Fixed Charge Density ◽  
Capping Layer ◽  
Nitrogen Incorporation ◽  
Cw Laser ◽  
Laser Recrystallization

ABSTRACTThe incorporation of nitrogen and oxygen in polysilicon has been examined by SIMS. The analysis, combined with C-V measurements and ion implantation, has been used to correlate the incorporation of the two species with the fixedcharge density at the back polysilicon/Si02 interface. Laser recrystallization with a silicon-nitride encapsulation layer results in the inclusion of 2–4 × 1017 cm−3 nitrogen atoms in the polysilicon; if an oxide capping layer is used, the nitrogen level observed is at the background of the SIMS system (~1015cm−3). Either type of capping layer results in 3−4×1018cm−3 oxygen atoms being incorporated into the polysilicon. Implantation of nitrogen into the polysilicon before recrystallization increases the fixed-charge density Nf,b) at the back interface, while implanted oxygen decreases Nf, b. The high Nf, b found with a nitride capping layer is attributed to deposition of nitrogen or SiNx at the back interface.

Low Surface Recombination Velocity by Low-Absorption Silicon Nitride on c-Si

2013 ◽  
Vol 3 (1) ◽  
pp. 554-559 ◽  
Author(s):  
Yimao Wan ◽  
Keith R. McIntosh ◽  
Andrew F. Thomson ◽  
Andres Cuevas
Keyword(s):  
Silicon Nitride ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis

2005 ◽  
Vol 483-485 ◽  
pp. 589-592 ◽  
Author(s):  
Kevin Matocha ◽  
Jesse B. Tucker ◽  
Ed Kaminsky
Keyword(s):  
Silicon Nitride ◽  
Charge Density ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Fixed Charge ◽  
Fixed Charge Density ◽  
Class Ab ◽  
Power Added Efficiency ◽  
Thermal Oxide ◽  
Trapped Charge

Different SiC thermal oxide passivation techniques were characterized using UV-induced hysteresis to estimate the fixed charge, Qf, and interface-trapped charge, Qit. Steam-grown oxides have a fixed charge density of Qf=-1x1012 cm-2, and a net interface-trapped charge density of Qit=4x1011cm-2. Addition of a thin low-pressure chemical-vapor deposited (LPCVD) silicon nitride layer decreased these parameters to Qf=-2x1011 cm-2 and Qit=4x1010 cm-2. Dry oxide shows a fixed charge density, Qf=-3x1012 cm-2 and interface-trapped charge density, Qit=4x1011 cm-2 which changes to Qf=+7x1010 cm-2 and Qit=1x1010 cm-2 with the addition of a LPCVD silicon nitride cap. Dry thermal oxide with a silicon nitride cap was used to passivate SiC MESFETs to achieve a power-added efficiency of 60% in pulsed operation at 3 GHz in Class AB bias conditions.

scholarly journals Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

APL Materials ◽  
2014 ◽  
Vol 2 (9) ◽  
pp. 092504 ◽  
Author(s):  
Kevin Chen ◽  
Daisuke Kiriya ◽  
Mark Hettick ◽  
Mahmut Tosun ◽  
Tae-Jun Ha ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Charge Density ◽  
Fixed Charge ◽  
Fixed Charge Density ◽  
N Doping
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