Aluminum metallization—Advantages and limitations for integrated circuit applications

1969 ◽  
Vol 57 (9) ◽  
pp. 1570-1580 ◽  
Author(s):  
G.L. Schnable ◽  
R.S. Keen
Keyword(s):  
Integrated Circuit ◽  
Aluminum Metallization

Laser projection patterned aluminum metallization for integrated circuit applications

1987 ◽  
Vol 50 (12) ◽  
pp. 766-768 ◽  
Author(s):  
G. E. Blonder ◽  
G. S. Higashi ◽  
C. G. Fleming
Keyword(s):  
Integrated Circuit ◽  
Aluminum Metallization

Healing of voids in the aluminum metallization of integrated circuit chips

1990 ◽  
Vol 39 (5) ◽  
pp. 564-570 ◽  
Author(s):  
E.F. Cuddihy ◽  
R.A. Lawton ◽  
T.R. Gavin
Keyword(s):  
Integrated Circuit ◽  
Aluminum Metallization

Finite Element Analysis of Copper Wire Bonding in Integrated Circuit Devices

2012 ◽  
Vol 566 ◽  
pp. 293-299 ◽  
Author(s):  
Nauman Dastgir ◽  
Pooria Pasbakhsh ◽  
Ning Qun Guo ◽  
Norhazlina Ismail ◽  
Kheng Lim Goh
Keyword(s):  
Finite Element ◽  
Integrated Circuit ◽  
Copper Wire ◽  
Bonding Temperature ◽  
Element Analysis ◽  
Appreciable Change ◽  
Bonding Force ◽  
Wire Bond ◽  
Aluminum Metallization ◽  
Induced Stresses

Axisymmetric finite element models of copper wire-bond-pad structure for an integrated circuit devicewere developed to investigate theeffects of bonding force, initial bonding temperature, Aluminum metallization thickness, bond pad thickness and free air ball (FAB) diameter on induced stresses in the wire-bond structure. The results show that an increase in bonding force greatly increased the induced stresses in the copper FAB and bond pad (aluminum and silicon). However, a change in bonding temperature while keeping the bonding force constant does not result in an appreciable change in the stress. Similarly an increase in aluminium metallization thickness does not yield appreciable variation in the stress and strain in the bond pad. Over the range of FAB diameters studied it is found that bigger FAB yields smaller stress in the overall structure

A new large-scale integrated metallization-failure mechanism

1985 ◽  
Vol 63 (6) ◽  
pp. 901-905
Author(s):  
S. P. Bellier ◽  
R. F. Haythornthwaite
Keyword(s):  
Integrated Circuits ◽  
Failure Mechanism ◽  
Integrated Circuit ◽  
Large Scale ◽  
Silicon Oxide ◽  
High Reliability ◽  
Water System ◽  
Ultrasonic Agitation ◽  
Scanning Auger Microprobe ◽  
Aluminum Metallization

A new integrated-circuit metallization-failure mechanism is reported. The aluminum metallization sometimes disintegrates during ultrasonic agitation despite the fact that the aluminium–silicon oxide–water system is thermodynamically stable under conditions normally encountered by integrated circuits. The disintegration reduces conductor cross section and increases the probability of failure by electromigration. Faulty batches of metallization from six manufacturers have been found; one batch of devices, which failed abnormally early through electromigration, had the faulty metallization.Scanning–electron–microscope examination revealed that foreign material or voids were sometimes visible between the aluminum grains but there was often no visible indication of the problem areas. Scanning Auger microprobe examination revealed nitrogen and oxygen in the aluminum of faulty batches, and carbon was also present in the areas that lifted. Aluminum, which was unaffected by ultrasonic agitation, had no additional elements.Experiments in controlling the evaporation environment to increase the probability of incorporating oxygen, nitrogen, and carbon into the aluminum layer were unsuccessful.Ultrasonic agitation provides an economic possibility for screening devices with unstable metallization. It can be introduced during wafer manufacture or as a sampling screen on completed devices for high reliability applications.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Characterization of RF Sputtered ZnO Piezoelectric Films Using Transmission Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 86-87
Author(s):  
Kemining W. Yeh ◽  
Richard S. Muller ◽  
Wei-Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Integrated Circuit ◽  
Acoustic Waves ◽  
New Technology ◽  
Surface Acoustic Waves ◽  
Electromechanical Properties ◽  
Leading Role ◽  
Saw Devices ◽  
Transmission Electron ◽  
High Degree

Considerable and continuing interest has been shown in the thin film transducer fabrication for surface acoustic waves (SAW) in the past few years. Due to the high degree of miniaturization, compatibility with silicon integrated circuit technology, simplicity and ease of design, this new technology has played an important role in the design of new devices for communications and signal processing. Among the commonly used piezoelectric thin films, ZnO generally yields superior electromechanical properties and is expected to play a leading role in the development of SAW devices.

Sign in / Sign up

Export Citation Format

Share Document