High power pulsed avalanche diode oscillators for microwave frequencies

1967 ◽  
Vol 55 (7) ◽  
pp. 1227-1228 ◽  
Author(s):  
M. Gilden ◽  
W. Moroney
1988 ◽  
Vol 64 (6) ◽  
pp. 3277-3281 ◽  
Author(s):  
H. Ikezi ◽  
S. S. Wojtowicz ◽  
R. E. Waltz ◽  
J. S. deGrassie ◽  
D. R. Baker

1976 ◽  
Vol 28 (10) ◽  
pp. 626-627 ◽  
Author(s):  
P. K. Cheo ◽  
M. Gilden

Vacuum ◽  
1959 ◽  
Vol 9 (1) ◽  
pp. 84
Author(s):  
J. Jasberg ◽  
J.V. Lebacqz

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Walter Ciccognani ◽  
Sergio Colangeli ◽  
Claudio Verona ◽  
Fabio Di Pietrantonio ◽  
Domenico Cannatà ◽  
...  

Abstract The first realizations of S-band hybrid amplifiers based on hydrogenated-diamond (H-diamond) FETs are reported. As test vehicles of the adopted H-diamond technology at microwave frequencies, two designs are proposed: one, oriented to low-noise amplification, the other, oriented to high-power operation. The two amplifying stages are so devised as to be cascaded into a two-stage amplifier. The activities performed, from the technological steps to characterization, modelling, design and realization are illustrated. Measured performance demonstrates, for the low-noise stage, a noise figure between 7 and 8 dB in the 2–2.5 GHz bandwidth, associated with a transducer gain between 5 and 8 dB. The OIP3 at 2 GHz is 21 dBm. As to the power-oriented stage, its transducer gain is 5–6 dB in the 2–2.5 GHz bandwidth. The 1-dB output compression point at 2 GHz is 20 dBm whereas the OIP3 is 33 dBm. Cascading the measured S-parameters of the two stages yields a transducer gain of 15 ± 1.2 dB in the 2–3 GHz bandwidth.


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