High‐power soliton generation at microwave frequencies

1988 ◽  
Vol 64 (6) ◽  
pp. 3277-3281 ◽  
Author(s):  
H. Ikezi ◽  
S. S. Wojtowicz ◽  
R. E. Waltz ◽  
J. S. deGrassie ◽  
D. R. Baker
Keyword(s):  
High Power ◽  
Microwave Frequencies ◽  
Soliton Generation

High‐power integrated optic ir modulator at microwave frequencies

1976 ◽  
Vol 28 (10) ◽  
pp. 626-627 ◽  
Author(s):  
P. K. Cheo ◽  
M. Gilden
Keyword(s):  
High Power ◽  
Microwave Frequencies

Problems related to very high power windows at microwave frequencies

Vacuum ◽  
1959 ◽  
Vol 9 (1) ◽  
pp. 84
Author(s):  
J. Jasberg ◽  
J.V. Lebacqz
Keyword(s):  
High Power ◽  
Microwave Frequencies ◽  
Very High

scholarly journals S-band hybrid amplifiers based on hydrogenated diamond FETs

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Walter Ciccognani ◽  
Sergio Colangeli ◽  
Claudio Verona ◽  
Fabio Di Pietrantonio ◽  
Domenico Cannatà ◽  
...  
Keyword(s):  
High Power ◽  
Noise Figure ◽  
Low Noise ◽  
The Other ◽  
Two Stage ◽  
Microwave Frequencies ◽  
High Power Operation ◽  
Power Operation ◽  
Two Stages ◽  
Noise Amplification

Abstract The first realizations of S-band hybrid amplifiers based on hydrogenated-diamond (H-diamond) FETs are reported. As test vehicles of the adopted H-diamond technology at microwave frequencies, two designs are proposed: one, oriented to low-noise amplification, the other, oriented to high-power operation. The two amplifying stages are so devised as to be cascaded into a two-stage amplifier. The activities performed, from the technological steps to characterization, modelling, design and realization are illustrated. Measured performance demonstrates, for the low-noise stage, a noise figure between 7 and 8 dB in the 2–2.5 GHz bandwidth, associated with a transducer gain between 5 and 8 dB. The OIP3 at 2 GHz is 21 dBm. As to the power-oriented stage, its transducer gain is 5–6 dB in the 2–2.5 GHz bandwidth. The 1-dB output compression point at 2 GHz is 20 dBm whereas the OIP3 is 33 dBm. Cascading the measured S-parameters of the two stages yields a transducer gain of 15 ± 1.2 dB in the 2–3 GHz bandwidth.

High-power windows at microwave frequencies

1958 ◽  
Vol 105 (11S) ◽  
pp. 617-621 ◽  
Author(s):  
J.V. Lebacqz ◽  
J. Jasberg ◽  
H.J. Shaw ◽  
S. Sonkin
Keyword(s):  
High Power ◽  
Microwave Frequencies

SILICON CARBIDE DIODES FOR MICROWAVE APPLICATIONS

2005 ◽  
Vol 15 (04) ◽  
pp. 899-930 ◽  
Author(s):  
Konstantin Vassilevski
Keyword(s):  
Silicon Carbide ◽  
Thermal Properties ◽  
Schottky Barrier ◽  
High Power ◽  
Current Position ◽  
Microwave Frequencies ◽  
Figures Of Merit ◽  
Microwave Applications ◽  
Device Operation ◽  
Impatt Diodes

Silicon carbide ( SiC ) offers significant advantages for microwave high power devises due to its unique electrical and thermal properties. This review presents a summary of the current position in the development of silicon carbide diodes operating at microwave frequencies: varactors, Schottky barrier mixer diodes, p-i-n and IMPATT diodes. Simplified theory of device operation is given for each kind of microwave diodes to derive the figures of merit, to estimate the potential silicon carbide performance for fabrication of these diodes and to compare SiC with conventional semiconductors. These analyses are followed by description of diode design, fabrication and measured characteristics.

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