Light-emitting, formed-point-contact gallium arsenide and gallium arsenide-phosphide diodes

1964 ◽  
Vol 52 (7) ◽  
pp. 850-851 ◽  
Author(s):  
L.U. Kibler ◽  
C.A. Burrus ◽  
R.F. Trambarulo
Keyword(s):  
Gallium Arsenide ◽  
Point Contact ◽  
Light Emitting ◽  
Gallium Arsenide Phosphide

Preparation and thermolysis of a single-source precursor to gallium arsenide phosphide

1995 ◽  
Vol 1 (1) ◽  
pp. 28-31 ◽  
Author(s):  
Steven R. Aubuchon ◽  
Michael S. Lube ◽  
Richard L. Wells
Keyword(s):  
Gallium Arsenide ◽  
Single Source ◽  
Gallium Arsenide Phosphide ◽  
Single Source Precursor

Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices

2016 ◽  
Vol 4 (8) ◽  
pp. 2909-2918 ◽  
Author(s):  
Ann L. Greenaway ◽  
Allison L. Davis ◽  
Jason W. Boucher ◽  
Andrew J. Ritenour ◽  
Shaul Aloni ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Electronic Properties ◽  
Low Cost ◽  
Vapor Transport ◽  
Mixed Powder ◽  
Gallium Arsenide Phosphide

Close-spaced vapor transport provides GaAs1−xPx with controlled composition and competitive electronic properties.

Optical Properties of Gallium Arsenide-Phosphide

1967 ◽  
Vol 156 (3) ◽  
pp. 913-924 ◽  
Author(s):  
George D. Clark ◽  
Nick Holonyak
Keyword(s):  
Gallium Arsenide ◽  
Optical Properties ◽  
Gallium Arsenide Phosphide
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