Optical Properties of Gallium Arsenide-Phosphide

1967 ◽  
Vol 156 (3) ◽  
pp. 913-924 ◽  
Author(s):  
George D. Clark ◽  
Nick Holonyak
1993 ◽  
Vol 164-166 ◽  
pp. 889-892 ◽  
Author(s):  
Roberto Murri ◽  
Nicola Pinto

1995 ◽  
Vol 1 (1) ◽  
pp. 28-31 ◽  
Author(s):  
Steven R. Aubuchon ◽  
Michael S. Lube ◽  
Richard L. Wells

2016 ◽  
Vol 4 (8) ◽  
pp. 2909-2918 ◽  
Author(s):  
Ann L. Greenaway ◽  
Allison L. Davis ◽  
Jason W. Boucher ◽  
Andrew J. Ritenour ◽  
Shaul Aloni ◽  
...  

Close-spaced vapor transport provides GaAs1−xPx with controlled composition and competitive electronic properties.


1994 ◽  
Vol 358 ◽  
Author(s):  
X. S. Zhao ◽  
Y. R. Ge ◽  
J. Schroeder ◽  
P. D. Persans

ABSTRACTRaman scattering results on porous silicon, and silicon and gallium arsenide nanocrystals show that almost all vibrational modes become Raman active and remarkably soft in these nanocrystal systems. The experimental results further demonstrate that the carrier-induced strain effects play an important role on the optical properties of such nanocrystal systems.


1972 ◽  
Vol 10 (1) ◽  
pp. 127-137 ◽  
Author(s):  
K. V. Vaidyanathan ◽  
L. A. K. Watt ◽  
M. L. Swanson

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