Formed-point-contact varactor diodes utilizing a thin epitaxial gallium arsenide layer

1963 ◽  
Vol 51 (12) ◽  
pp. 1777-1778 ◽  
Author(s):  
C.A. Burrus
1966 ◽  
Vol 31 (4) ◽  
pp. 245
Author(s):  
C.A.P. Foxell ◽  
K. Wilson

1963 ◽  
Author(s):  
H. Kressel ◽  
G. A. Kupsky

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