Formed-point-contact varactor diodes utilizing a thin epitaxial gallium arsenide layer
1963 ◽
Vol 51
(12)
◽
pp. 1777-1778
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1959 ◽
Vol 38
(1)
◽
pp. 259-269
◽
1963 ◽
1970 ◽
Vol 9
(1)
◽
pp. 71
◽
Keyword(s):
1961 ◽
Vol 9
(1)
◽
pp. 6-10
◽
1968 ◽
Vol 16
(5)
◽
pp. 287-296
◽
1966 ◽
Vol 9
(1)
◽
pp. 49-58
◽