Effect of reactive ion etching chemistry on plasma damage in EPROM cells

2002 ◽  
Author(s):  
C.K. Barlingay ◽  
R. Yach ◽  
W. Lukaszek
Keyword(s):  
Reactive Ion Etching ◽  
Plasma Damage ◽  
Ion Etching

Reduction of Plasma Damage in Reactive Ion Etching by Means of Suppressing Self-Bias

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4461-4464
Author(s):  
Takeo Ohte ◽  
Hidetake Aoyama ◽  
Makoto Goto ◽  
Minoru Sugawara
Keyword(s):  
Reactive Ion Etching ◽  
Plasma Damage ◽  
Ion Etching ◽  
Self Bias

RIE-Texturing of Industrial Multicrystalline Silicon Solar Cells

Solar Energy ◽  
2003 ◽  
Author(s):  
Douglas S. Ruby ◽  
Saleem Zaidi ◽  
S. Narayanan ◽  
Satoshi Yamanaka ◽  
Ruben Balanga
Keyword(s):  
Solar Cells ◽  
Reactive Ion Etching ◽  
Cell Performance ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Plasma Damage ◽  
Ion Etching ◽  
Low Levels

We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.

Using Auger Electron Spectroscopy for Chemical Analysis of Plasma Damage Induced by Reactive Ion Etching of SiO2

1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 6199-6203 ◽  
Author(s):  
Miyako Matsui ◽  
Fumihiko Uchida ◽  
Kiyomi Katsuyama ◽  
Takafumi Tokunaga ◽  
Masayuki Kojima
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Reactive Ion Etching ◽  
Plasma Damage ◽  
Ion Etching

RIE-Texturing of Industrial Multicrystalline Silicon Solar Cells

2005 ◽  
Vol 127 (1) ◽  
pp. 146-149 ◽  
Author(s):  
Douglas S. Ruby ◽  
Saleem Zaidi ◽  
S. Narayanan ◽  
Satoshi Yamanaka ◽  
Ruben Balanga
Keyword(s):  
Solar Cells ◽  
Reactive Ion Etching ◽  
Cell Performance ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Plasma Damage ◽  
Ion Etching ◽  
Low Levels

We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.

Reactive Ion Etching Processes for Amorphous Germanium Alloys

1993 ◽  
Vol 316 ◽  
Author(s):  
Yue Kuo
Keyword(s):  
Reactive Ion Etching ◽  
Germanium Oxide ◽  
Plasma Damage ◽  
Silicon Alloys ◽  
Ion Etching ◽  
Amorphous Germanium ◽  
Process Characteristics ◽  
Bombardment Energy ◽  
Phase Chemistry ◽  
Germanium Silicon

ABSTRACTThis paper presents results on reactive ion etching (RIE) processes of amorphous germanium (a-Ge:H), germanium silicon alloys (a-GeSix:H) and germanium oxide (GeOx). Their process characteristics are compared with those of the amorphous silicon (a-Si:H) and silicon nitride (SiNx). Various combinations of feeding gases, i.e., from CF4, CF2Cl2, CH3F, and O2, over a pressure range of 100 to 300 mTorr and a power range of 500 to 1500 W were used in this study. The following conclusions are drawn from the results: 1) the a-Ge:H and a-GeSix:H etch mechanisms are similar to that of a-Si:H, but the former have higher etch rates than the latter; 2) a-GeSix:H etch rate falls between those of a-Ge:H and a-Si:H; 3) the GeOx etch mechanism is similar to that of SiNx; 4) although plasma phase chemistry, ion bombardment energy, and surface reactions are all important to the etch process, the film component selectivity is greatly dependent on the feeding gas; 5) to obtain a high etch selectivity between a-GeSix:H and PECVD SiNx a chlorine-containing gas has to be used; 6) RIE plasma damage to a-Si:H TFT is decreased when it is covered with an a-GeSix:H layer.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated
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