Effective-mass superlattice as a ballistic transport element

Author(s):  
M.V. Klymenko ◽  
I.M. Safonov ◽  
I.A. Sukhoivanov ◽  
R. Michalzik
2009 ◽  
Vol 19 (01) ◽  
pp. 15-22
Author(s):  
LINGQUAN (DENNIS) WANG ◽  
BO YU ◽  
PETER M. ASBECK ◽  
YUAN TAUR ◽  
MARK RODWELL

This paper describes analysis and simulations of Si and III-V Gate-All-Around nanowire MOSFETS assuming ballistic or quasi-ballistic transport. It is found that either channel material can provide the higher saturation current depending on the oxide thickness. For effective oxide thickness above approximately 0.5nm, the higher electron velocity of III-V's outweighs the higher density of states available in the Si device associated with higher effective mass and valley degeneracy and result in higher current for the III-V device. However, materials with higher effective mass and valley degeneracy result in smaller on-resistance in ballistic limit. Depending on the gate oxide capacitance, valley degeneracy may influence the attainable saturation current in a positive or negative way.


2016 ◽  
Vol 186 (6) ◽  
pp. 640-646
Author(s):  
Alexei V. Samokhvalov ◽  
Alexander S. Mel'nikov ◽  
Alexander I. Buzdin

2011 ◽  
Vol 35 (1) ◽  
pp. 15-27
Author(s):  
Zoran Ivić ◽  
Željko Pržulj

Adiabatic large polarons in anisotropic molecular crystals We study the large polaron whose motion is confined to a single chain in a system composed of the collection of parallel molecular chains embedded in threedimensional lattice. It is found that the interchain coupling has a significant impact on the large polaron characteristics. In particular, its radius is quite larger while its effective mass is considerably lighter than that estimated within the one-dimensional models. We believe that our findings should be taken into account for the proper understanding of the possible role of large polarons in the charge and energy transfer in quasi-one-dimensional substances.


Author(s):  
Sandip Tiwari

This chapter brings together the physical underpinnings of field-effect transistors operating in their nanoscale limits. It tackles the change in dominant behavior from scattering-limited long-channel transport to mesoscopic and few scattering events limits in quantized channels. It looks at electrostatics and a transistor’s controllability as dimensions are shrunk—the interplay of geometry and control—and then brings out the operational characteristics in “off”-state, e.g., the detailed nature of insulator’s implications or threshold voltage’s statistical variations grounded in short-range and long-range effects, and “on”-state, where quantization, quantized channels, ballistic transport and limited scattering are important. It also explores the physical behavior for zero bandgap and monoatomic layer materials by focusing on real-space and reciprocal-space funneling as one of the important dimensional change consequences through a discussion of parasitic resistances.


1988 ◽  
Vol 24 (1) ◽  
pp. 64-65 ◽  
Author(s):  
A. Aishima ◽  
Y. Fukushima
Keyword(s):  

2017 ◽  
Vol 26 (2) ◽  
pp. 027305 ◽  
Author(s):  
Sen Li ◽  
Guang-Yao Huang ◽  
Jing-Kun Guo ◽  
Ning Kang ◽  
Philippe Caroff ◽  
...  

2014 ◽  
Vol 29 (21) ◽  
pp. 1444010
Author(s):  
Bruce H. J. McKellar ◽  
T. J. Goldman ◽  
G. J. Stephenson

If fermions interact with a scalar field, and there are many fermions present the scalar field may develop an expectation value and generate an effective mass for the fermions. This can lead to the formation of fermion clusters, which could be relevant for neutrino astrophysics and for dark matter astrophysics. Because this system may exhibit negative pressure, it also leads to a model of dark energy.


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