High Numerical Aperture Hemisphere Solid Immersion Lens made of KTaO3 with Wide Thickness Tolerance

Author(s):  
K. Saito ◽  
T. Kondo ◽  
A. Nakaoki ◽  
M. Sasaura ◽  
K. Fujiura
2007 ◽  
Author(s):  
Ariyoshi Nakaoki ◽  
Takao Kondo ◽  
Kimihiro Saito ◽  
Masahiro Sasaura ◽  
Kazuo Fujiura

Author(s):  
M.S. Wei ◽  
H.B. Chong ◽  
S.H. Lim ◽  
C. Richardson

Abstract High resolution laser imaging, using high numerical aperture (NA) solid immersion lens (SIL) for backside fault isolation imposes stringent sample preparation requirements; as a result of the short focal length of SIL, a die must be thinned to a targeted thickness with less than a ±5 μm silicon thickness variation across the entire die. Flip chip packaged dice suffer from warpage due to various package sizes and substrate thicknesses. Such broad spectrums of part geometries pose a great challenge to meet such silicon planarity requirements. As relaxation of the packaged silicon during polishing causes the warpage profile to change dynamically and unpredictably throughout the thinning process, it has become an added challenge to meet the stringent sample preparation requirements. To overcome the stochastic nature of this problem, a two-step polishing recipe consisting of computer numerical control (CNC) mechanical milling and polishing processes has been developed to achieve sufficient silicon thickness uniformity to enable SIL imaging across an entire silicon chip as large as approximately 20 mm x 15 mm.


1999 ◽  
Vol 35 (5) ◽  
pp. 3100-3105 ◽  
Author(s):  
A. Chekanov ◽  
M. Birukawa ◽  
Y. Itoh ◽  
T. Suzuki

2007 ◽  
Vol 46 (6B) ◽  
pp. 3724-3728 ◽  
Author(s):  
Narak Choi ◽  
Seongbo Shim ◽  
Tom D. Milster ◽  
Jaisoon Kim

2009 ◽  
Vol 48 (3) ◽  
pp. 03A040 ◽  
Author(s):  
Yong-Joong Yoon ◽  
Cheol-Ki Min ◽  
Wan-Chin Kim ◽  
No-Cheol Park ◽  
Young-Pil Park ◽  
...  

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