Driving spectral resolution to the noise limit in semiconductor gamma detector arrays

Author(s):  
U. Lachish
2017 ◽  
Author(s):  
Stephan Friedrich ◽  
Stephen Boyd ◽  
Robin Cantor

1986 ◽  
Vol 71 ◽  
Author(s):  
H. Zogg ◽  
W. Vogt ◽  
H. Melchior

AbstractComposition graded buffer layers of group Ila fluorides allow the heteroepitaxial growthof device quality narrow gap lead chalcogenides onto Si. Mechanical stresses in the layers are almost completely relaxed at room temperature despite large thermal expansion mismatches. Photovoltaic infrared sensors with up to about 9.5 um cut—off wavelengths and which operate at or near the 300K background noise limit have been fabricated in such PbTe and (Pb,Sn)Se on Si structures.Furthermore, epitaxial graded fluoride buffers seem to be suited to connect other semiconductors with even large lattice mismatches. Initial heteroepitaxial growth of CdTe on fluoride/Si(lll) substrates (mismatch 20%) supports such more general applications.


2021 ◽  
pp. 2130013
Author(s):  
S. C. Pancholi

This brief review presents current experimental evidence on the existence of deformed axially symmetric but reflection asymmetric or pear shapes in nuclei. A summary of the main findings on the properties of nuclear energy levels and electric transition probabilities is given. These experimental investigations have been possible due to the development of high efficiency gamma-detector arrays and production and availability of exotic radioactive ion beams which facilitated in-beam Coulomb excitation. The nuclear structure of odd-mass pear-shaped nuclei has assumed importance as they can be vital in solving some of the fundamental problems in physics. This paper is sequel to the publication of the book by the author on Pear-shaped Nuclei (World Scientific, 2020).


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