Growth of Heteroepitaxial Lead Chalcogenide Infrared Detector Arrays on Fluoride Coveredsilicon Substrates

1986 ◽  
Vol 71 ◽  
Author(s):  
H. Zogg ◽  
W. Vogt ◽  
H. Melchior
Keyword(s):  
Background Noise ◽  
Infrared Detector ◽  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
Lead Chalcogenide ◽  
Lead Chalcogenides ◽  
Infrared Sensors ◽  
Detector Arrays ◽  
Large Lattice ◽  
Noise Limit

AbstractComposition graded buffer layers of group Ila fluorides allow the heteroepitaxial growthof device quality narrow gap lead chalcogenides onto Si. Mechanical stresses in the layers are almost completely relaxed at room temperature despite large thermal expansion mismatches. Photovoltaic infrared sensors with up to about 9.5 um cut—off wavelengths and which operate at or near the 300K background noise limit have been fabricated in such PbTe and (Pb,Sn)Se on Si structures.Furthermore, epitaxial graded fluoride buffers seem to be suited to connect other semiconductors with even large lattice mismatches. Initial heteroepitaxial growth of CdTe on fluoride/Si(lll) substrates (mismatch 20%) supports such more general applications.

Buffer Layers for Ferroelectric-Based Infra-Red Detectors on Si Grown by a Novel CVD Method

1994 ◽  
Vol 299 ◽  
Author(s):  
Gregory T. Stauf ◽  
Peter C. VanBuskirk ◽  
Peter S. Kirlin ◽  
Walter P. Kosar
Keyword(s):  
Low Cost ◽  
Infrared Detector ◽  
Liquid Solution ◽  
Buffer Layers ◽  
Single Source ◽  
Detector Arrays ◽  
Si Substrates ◽  
Materials Integration ◽  
Stoichiometry Control ◽  
Detector Materials

AbstractFerroelectrics such as PbTiO3 and BaSrTiO3 are promising candidates for pyroelectric infrared detector materials. Integration of ferroelectric thin films on Si will permit fabrication of low-cost infrared detector arrays, but a buffer layer will be required to reduce interactions with the substrate. For this reason we have investigated MOCVD of MgAl2O4 and yttria-stabilized zirconia (YSZ) buffer layers on both Si and MgO. A single source molecule, magnesium dialuminum isopropoxide (Mg[Al(OCH(CH3)2)4]2), was used for deposition of the MgAl2O4, the first time to our knowledge that well characterized multi-metal oxide films have been deposited by CVD from a single-source compound. Both EDAX and RBS showed film stoichiometries consistent with the elemental ratio in the source. A novel liquid solution-based flash vaporization technique was used to transport the organometallic sources into the reactor, providing both excellent reproducibility and ease of stoichiometry control and deposition rate. Highly oriented [100] MgAl2O4 was grown on MgO, and [100] YSZ was grown on MgO and Si. Degree of preferred orientation of the YSZ was found to be dependent on oxygen partial pressure, both for the MgO and Si substrates.

Growth and properties of epitaxial PbSe on Si(111) and Si(100) without buffer layer

1995 ◽  
Vol 379 ◽  
Author(s):  
P. Müller ◽  
A.N. Tiwari ◽  
H. Zogg
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Infrared Detector ◽  
Device Fabrication ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
High Quality ◽  
Si Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch

Narrow gap IV-VI materials like PbS, PbSnSe and PbSnTe are used for infrared detector device fabrication [1,2]. Earlier an intermediate Ila-fluoride buffer layer, which consisted of a BaF2/CaF2-stack of about 2000 Å thickness, was used to get epitaxial high quality layers on silicon substrates. This buffer is now reduced to a much thinner layer of only about 20 Å thick CaF2, regardless the large lattice mismatch between layer and substrate [3,4,5]. The question therefore arises if high quality IV-VI layers can be grown on Si-substrates without any buffer layer as e.g. in CdTe/Si or GaAs/Si systems.The aim of this work is to grow IV-VI layers directly on Si-substrates without any buffer layers to study the growth kinetics and epitaxial quality. PbSe was chosen as a representant of IV-VI materials, and layers were grown on (111)- and (100)-oriented silicon substrates.

Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

2006 ◽  
Vol 295 (2) ◽  
pp. 103-107 ◽  
Author(s):  
Wu-Yih Uen ◽  
Zhen-Yu Li ◽  
Yen-Chin Huang ◽  
Meng-Chu Chen ◽  
Tsun-Neng Yang ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
Gaas On Si

Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering

2015 ◽  
Vol 1741 ◽  
Author(s):  
Tomoaki Ide ◽  
Koichi Matsushima ◽  
Ryota Shimizu ◽  
Daisuke Yamashita ◽  
Hynwoong Seo ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Crystal Nucleation ◽  
Zno Films ◽  
Growth Stages ◽  
Initial Growth ◽  
Height Distribution ◽  
Heteroepitaxial Growth ◽  
Distribution Profile

ABSTRACTEffects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of “nitrogen mediated crystallization (NMC) method”, where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.

Analysis of crosstalk in front-illuminated InGaAs PIN hetero-junction photovoltaic infrared detector arrays

2009 ◽  
Author(s):  
Yongfu Li ◽  
Hengjing Tang ◽  
Kefeng Zhang ◽  
Tao Li ◽  
Jinhua Ning ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Detector Arrays

The HAWAII Infrared Detector Arrays: testing and astronomical characterization of prototype and science-grade devices

New Astronomy ◽  
1996 ◽  
Vol 1 (2) ◽  
pp. 177-196 ◽  
Author(s):  
K.-W. Hodapp ◽  
J.L. Hora ◽  
D.N.B. Hall ◽  
L.L. Cowie ◽  
M. Metzger ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Detector Arrays
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