New SRAM Cell Design for Low Power and High Reliability Using  32nm Independent Gate FinFET Technology

Author(s):  
Young Bok Kim ◽  
Yong-Bin Kim ◽  
Fabrizio Lombardi
2020 ◽  
Vol 105 ◽  
pp. 113503 ◽  
Author(s):  
Soumitra Pal ◽  
Subhankar Bose ◽  
Wing-Hung Ki ◽  
Aminul Islam
Keyword(s):  

Author(s):  
Nurul Ezaila Alias ◽  
Afiq Hamzah ◽  
Michael Loong Peng Tan ◽  
Usman Ullah Sheikh ◽  
Munawar A. Riyadi

2013 ◽  
Vol 56 (9) ◽  
pp. 434-440 ◽  
Author(s):  
Vandna Sikarwar ◽  
Saurabh Khandelwal ◽  
Shyam Akashe

Sign in / Sign up

Export Citation Format

Share Document