New SRAM Cell Design for Low Power and High Reliability Using 32nm Independent Gate FinFET Technology
2018 ◽
Vol 6
(4)
◽
pp. 332-340
2012 ◽
pp. 139-146
◽
Keyword(s):
2020 ◽
Vol 105
◽
pp. 113503
◽
2013 ◽
Vol 56
(9)
◽
pp. 434-440
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