Design of 9-transistor content addressable memory cells using Schottky-barrier carbon nanotube field effect transistors

2016 ◽  
Author(s):  
Subhajit Das ◽  
Debaprasad Das ◽  
Hafizur Rahaman
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Cells ◽  
Content Addressable Memory

Optimization of Schottky barrier carbon nanotube field effect transistors

2005 ◽  
Vol 81 (2-4) ◽  
pp. 428-433 ◽  
Author(s):  
M. Pourfath ◽  
E. Ungersboeck ◽  
A. Gehring ◽  
B.H. Cheong ◽  
W.J. Park ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals SIMULATION AND ANALYSIS OF 3T AND 4T CNTFET DRAM DESIGN IN 32nm TECHNOLOGY

2014 ◽  
pp. 53-59
Author(s):  
N. SOMORJIT SINGH ◽  
DR.M. MADHESWARAN
Keyword(s):  
Carbon Nanotube ◽  
Power Dissipation ◽  
Delay Time ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Leakage Power ◽  
Memory Cells ◽  
Time Dynamic

Carbon Nanotube Field Effect Transistors (CNTFETs) is a promising device alternative for future nanometersscale technology. This paper presents 3TCNTFET & 4TCNTFET simulation and analysis of DRAM with metallic CNTFET using a CNTFET SPICE(HSPICE) model with 32ns technology have shown the DRAM cells in terms of leakage power, power dissipation, delay time, dynamic write and read power. Here, comparison between 4TDRAM and 3TDRAM memory cells is also shown which 3TDRAM has better performance in power dissipation and leakage power than 4TDRAM cell, but less delay in 4TDRAM.

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