Production Technology Development for High Yield, High Performance X-Band Monolithic Power and Low Noise Amplifiers

2005 ◽  
Author(s):  
C.D. Chang ◽  
S.K. Wang ◽  
L.C.T. Liu ◽  
M. Siracusa ◽  
H. Yamasaki ◽  
...  
Keyword(s):  
Production Technology ◽  
High Performance ◽  
Technology Development ◽  
Low Noise ◽  
High Yield ◽  
Low Noise Amplifiers ◽  
X Band

Cost-Effective High-Performance Monolithic X-Band Low-Noise Amplifiers

1986 ◽  
Vol 34 (12) ◽  
pp. 1553-1558 ◽  
Author(s):  
D.C. Wang ◽  
R.G. Pauley ◽  
Shing-Kuo Wang ◽  
L.C.T. Liu
Keyword(s):  
High Performance ◽  
Cost Effective ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
X Band

Cost-effective high-performance monolithic X-band low-noise amplifiers

1986 ◽  
Vol 33 (12) ◽  
pp. 2084-2089 ◽  
Author(s):  
D.C. Wang ◽  
R.G. Pauley ◽  
S. Wang ◽  
L.C.T. Liu
Keyword(s):  
High Performance ◽  
Cost Effective ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
X Band

X-band MMIC broadband low-noise amplifiers based on 0.15 μm GaAs pHEMT technology

2008 ◽  
Author(s):  
V. G. Mokerov ◽  
L. I. Babak ◽  
Yu. V. Fedorov ◽  
M. V. Cherkashin ◽  
F. I. Sheherman ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
X Band

High-performance Ka-band and V-band HEMT low-noise amplifiers

1988 ◽  
Vol 36 (12) ◽  
pp. 1598-1603 ◽  
Author(s):  
K.H.G. Duh ◽  
Pane-Chane Chao ◽  
P.M. Smith ◽  
L.F. Lester ◽  
B.R. Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Ka Band ◽  
V Band

GaAs MBE Monolithic Low-Noise Amplifiers at X-Band

1985 ◽  
Author(s):  
D. G. van der Merwe ◽  
H.-L. A. Hung ◽  
L. Camnitz ◽  
L. F. Eastman
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
X Band

Si-Ge heterojunction bipolar technology for high-speed integrated circuits

1996 ◽  
Vol 74 (S1) ◽  
pp. 159-166
Author(s):  
D. C. Ahlgren ◽  
S. J. Jeng ◽  
D. Nguyen-Ngoc ◽  
K. Stein ◽  
D. Sunderland ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
High Performance ◽  
Full Range ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Voltage Controlled Oscillators ◽  
Sige Hbt ◽  
Trade Offs ◽  
Scale Integration

This review discusses the fundamentals of SiGe epitaxial base heterojunction bipolar transistor (HBT) technology that have been developed for use in analog and mixed-signal applications in the 1–20 GHz range. The basic principles of operation of the graded base SiGe HBT are reviewed. These principles are then used to explore the design optimization for analog applications. Device results are presented that illustrate some important trade-offs in device design. A discussion of the use of UHV/CVD for the deposition of the epitaxial base profile is followed by an overview of the integrated process. This process, which has been installed on 200 mm wafers in IBM's Advanced Semiconductor Technology Center in Hopewell Junction, N.Y., also includes a full range of support devices. The process has demonstrated SiGe HBT performance, reliability, and yield in a CMOS fabrication with the addition of only one tool for UHV/CVD deposition of the epi-base and, with minimal additional process steps, can be used to fabricate full BiCMOS designs. This paper concludes with a discussion of high-performance circuits fabricated to date, including ECL ring'oscillators, power amplifiers, low-noise amplifiers, voltage-controlled oscillators, and finally a 12-bit DAC that features nearly 3000 SiGe HBT devices demonstrating medium-scale integration.

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