Normal incidence, long-wave infrared InAs/In/sub 0.15/Ga/sub 0.85/As dots-in-well detectors grown by molecular beam epitaxy

2003 ◽  
Author(s):  
S. Krishna ◽  
S. Raghavan ◽  
P. Rotella ◽  
B. Fuchs ◽  
A. Stintz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Normal Incidence ◽  
Long Wave ◽  
Long Wave Infrared

High Performance HgCdTe-Detectors Grown by Molecular Beam Epitaxy

1996 ◽  
Vol 450 ◽  
Author(s):  
R. D. Rajavel ◽  
D. M. Jamba ◽  
J. E. Jensen ◽  
O. K. Wu ◽  
C. A. Cockrum ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
Simultaneous Detection ◽  
Focal Plane Arrays ◽  
Long Wave ◽  
Sharp Turn ◽  
Midwave Infrared ◽  
Long Wave Infrared

ABSTRACTMolecular beam epitaxy (MBE) offers benefits such as the capability for growth of compositionally-tailored heterostructures and in-situ doping of HgCdTe alloys. These capabilities were applied to the growth of long wave infrared unispectral focal plane arrays (FPA) with 480×4 elements. The detectivity (D*) map of the FPA demonstrated performance that was higher than the specification value, with no defective channels. Two-color detectors with the n-p-n architecture, for the simultaneous detection of two closely spaced bands in the midwave infrared spectrum were also grown by MBE. These devices exhibited sharp turn-off and turn-on in both bands. The quantum efficiency was greater than 70% and average R°A values exceeded 1×106 Ω-cm2 in both bands. These result demonstrate that high performance HgCdTe devices can be grown by MBE.

Normal-incidence InAs/In0.15Ga0.85As quantum dots-in-a-well detector operating in the long-wave infrared atmospheric window (8–12 μm)

2004 ◽  
Vol 96 (2) ◽  
pp. 1036-1039 ◽  
Author(s):  
S. Raghavan ◽  
D. Forman ◽  
P. Hill ◽  
N. R. Weisse-Bernstein ◽  
G. von Winckel ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Normal Incidence ◽  
Long Wave ◽  
Atmospheric Window ◽  
Long Wave Infrared ◽  
Well Detector

Mbe Growth and Properties of HgCdTe Long Wave and Very Long Wave Infrared Detectors

1996 ◽  
Vol 421 ◽  
Author(s):  
R. D. Rajavel ◽  
O.K. Wu ◽  
J.E. Jensen ◽  
C.A. Cockrum ◽  
G.M. Venzor ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Infrared Detectors ◽  
High Performance ◽  
Molecular Beam ◽  
State Of The Art ◽  
Optical And Electrical Properties ◽  
Significant Progress ◽  
Mbe Growth ◽  
Long Wave ◽  
Long Wave Infrared

Abstractstructural, optical and electrical properties were evaluated. Significant progress has been made toward the growth of high performance HgCdTe devices by molecular beam epitaxy. Long wave infrared detectors operating at 9.9 μm at 78K exhibited a mean RoAo product of 1170 Ωcm2 at 0-fov. Very long wave infrared detectors operating at 14 μm at 78K exhibited a mean RoA product of 3.5 Ωcm2 at f/2 fov. These values represent the state-of-the- art for molecular beam epitaxially grown HgCdTe detectors.

High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector

2002 ◽  
Vol 81 (8) ◽  
pp. 1369-1371 ◽  
Author(s):  
S. Raghavan ◽  
P. Rotella ◽  
A. Stintz ◽  
B. Fuchs ◽  
S. Krishna ◽  
...  
Keyword(s):  
Normal Incidence ◽  
High Responsivity ◽  
Long Wave ◽  
Long Wave Infrared ◽  
Well Detector

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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