Room temperature 1.3 μm emission from self-assembled GaAs/GaSb quantum dots

2003 ◽  
Author(s):  
I. Farrer ◽  
M.J. Murphy ◽  
R.M. Thompson ◽  
N.S. Beattie ◽  
D.A. Ritchie ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Self Assembled

scholarly journals Erratum: “Narrow luminescence lines from self-assembled CdSe quantum dots at room temperature” [Appl. Phys. Lett. 78, 297 (2001)]

2001 ◽  
Vol 78 (23) ◽  
pp. 3749-3749
Author(s):  
Z. H. Zheng ◽  
K. Okamoto ◽  
H. C. Ko ◽  
Y. Kawakami ◽  
Sg. Fujita
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Cdse Quantum Dots ◽  
Self Assembled

Room temperature negative differential capacitance in self-assembled quantum dots

2008 ◽  
Vol 41 (23) ◽  
pp. 235107 ◽  
Author(s):  
V V Ilchenko ◽  
V V Marin ◽  
S D Lin ◽  
K Y Panarin ◽  
A A Buyanin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Differential Capacitance ◽  
Self Assembled

1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
Ray Murray ◽  
Caroline Bryan ◽  
Chris Button ◽  
D. Spikes ◽  
G. Hill
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Room Temperature ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Wide Range ◽  
Metal Organic ◽  
Self Assembled ◽  
Multi Quantum Well

ABSTRACTSelf-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/InGaAsP QD layer exhibit strong electroluminescence over a wide range of input currents and emit significantly more light per layer than a InGaAs/InGaAsP multi-quantum well device.

Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature

2022 ◽  
Vol 120 (1) ◽  
pp. 012105
Author(s):  
C. A. Sgroi ◽  
J. Brault ◽  
J.-Y. Duboz ◽  
S. Chenot ◽  
P. Vennéguès ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Charge Control ◽  
Self Assembled

1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 528-530 ◽  
Author(s):  
Ray Murray ◽  
David Childs ◽  
Surama Malik ◽  
Philip Siverns ◽  
Christine Roberts ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Self Assembled

Modified Luminescence from Germanium Self-assembled Quantum Dots in Photonic Crystal Cavity at Room Temperature

2006 ◽  
Author(s):  
Jinsong Xia ◽  
Norita Usami ◽  
Yuta Ikegami ◽  
Yasushi Nakata ◽  
Yasuhiro Shiraki
Keyword(s):  
Quantum Dots ◽  
Photonic Crystal ◽  
Room Temperature ◽  
Photonic Crystal Cavity ◽  
Self Assembled

scholarly journals Упорядоченные массивы квантовых точек Ge(Si), встроенные в двумерные фотонные кристаллы

2019 ◽  
Vol 53 (10) ◽  
pp. 1366
Author(s):  
Ж.В. Смагина ◽  
В.А. Зиновьев ◽  
Е.Е. Родякина ◽  
Б.И. Фомин ◽  
М.В. Степихова ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystals ◽  
Spectral Range ◽  
Silicon Surface ◽  
Room Temperature ◽  
Two Dimensional ◽  
Growth Modes ◽  
Self Assembled

Two approaches to the integration of ordered Ge(Si) self-assembled quantum dots (QDs) into two-dimensional photonic crystals (PhC) are considered in the paper. The first approach involves the synthesis on the structured silicon surface of the ordered Ge(Si) QD array, on which PhC is then formed. In the second approach, the PhC itself serves as the template for the ordered QD growth. It is shown that varying the diameter of PhC holes in the framework of the second approach, two growth modes of QDs can be realized, when they are formed inside or outside the PhC holes. For structures with ordered QDs built into PhC, an increase in the intensity of the photoluminescence signal was detected at room temperature in the spectral range of 0.9-1.2 eV, which is associated with the interaction of the emission with the radiation modes of PhC.

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