1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
Ray Murray ◽  
Caroline Bryan ◽  
Chris Button ◽  
D. Spikes ◽  
G. Hill
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Room Temperature ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Wide Range ◽  
Metal Organic ◽  
Self Assembled ◽  
Multi Quantum Well

ABSTRACTSelf-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/InGaAsP QD layer exhibit strong electroluminescence over a wide range of input currents and emit significantly more light per layer than a InGaAs/InGaAsP multi-quantum well device.

Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

2008 ◽  
Vol 25 (2) ◽  
pp. 667-670 ◽  
Author(s):  
Li Lin ◽  
Liu Guo-Jun ◽  
Wang Xiao-Hua ◽  
Li Mei ◽  
Li Zhan-Guo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Low Density ◽  
Metal Organic ◽  
Self Assembled

Fabrication of InxGa1-xN/GaN Multi-Quantum well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition

2019 ◽  
Vol 290 ◽  
pp. 147-152
Author(s):  
Shamsul Amir Abdul Rais ◽  
Hayatun Najihah ◽  
Zainuriah Hassan ◽  
Ahmad Shuhaimi
Keyword(s):  
Quantum Well ◽  
Chemical Vapour Deposition ◽  
Sapphire Substrate ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Patterned Sapphire Substrate ◽  
Quantum Well Structure ◽  
Metal Organic ◽  
Multi Quantum Well

Abstract. In an effort to successfully fabricate InGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in InxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 5 micrometre of undoped GaN epilayer was deposited as a buffer layer prior to the growth structure. 6 pairs of InGaN/GaN multi-quantum well structure grown by metal organic chemical vapour deposition (MOCVD). In this research, the indium to gallium composition ratio was 9:1. The crystal and optical properties of the samples were characterized using field effect atomic force microscopy, high resolution x-ray diffraction, and photoluminescence spectroscopy.

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

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