Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

2002 ◽  
Vol 14 (12) ◽  
pp. 1668-1670 ◽  
Author(s):  
Y.C. Lin ◽  
S.J. Chang ◽  
Y.K. Su ◽  
T.Y. Tsai ◽  
C.S. Chang ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

INTEGRATION OF N- AND P-CONTACTS TO GaN-BASED LIGHT EMITTING DIODES

2011 ◽  
Vol 20 (03) ◽  
pp. 521-525 ◽  
Author(s):  
WENTING HOU ◽  
THEERADETCH DETCHPROHM ◽  
CHRISTIAN WETZEL
Keyword(s):  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Voltage Drop ◽  
Light Emitting ◽  
Low Resistance ◽  
Electrical Devices ◽  
P Type ◽  
Lower Series ◽  
Post Deposition

Low-resistance Ohmic contacts are essential for the fabrication of electrical devices. While low contact resistance has been achieved to p -type layers or n -type layers separately, contacts are likely to degrade when both types need to be integrated into a single fabrication process, in particular when prior mesa etching is required. We present a solution to the problem, resulting in low-resistance Ohmic contacts on n -type GaN layers without post-deposition thermal anneal, while maintaining the quality of typical p -type contacts. We implement an integrated process for both, n - and p -contacts, involving an oxygen pretreatment to fabricate light emitting diodes with lower series resistance in the contacts and lower voltage drop at high current when compared to separately optimized contacts.

High-reflectivity Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

2004 ◽  
Vol 85 (14) ◽  
pp. 2797-2799 ◽  
Author(s):  
Guan-Ting Chen ◽  
Chang-Chi Pan ◽  
Chi-Shin Fang ◽  
Tzu-Chien Huang ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
High Reflectivity ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

Single Wall Carbon Nanotubes for p-Type Ohmic Contacts to GaN Light-Emitting Diodes

Nano Letters ◽  
2004 ◽  
Vol 4 (5) ◽  
pp. 911-914 ◽  
Author(s):  
K. Lee ◽  
Z. Wu ◽  
Z. Chen ◽  
F. Ren ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Single Wall Carbon Nanotubes ◽  
Light Emitting ◽  
Single Wall Carbon ◽  
P Type

Low-resistance and transparent Ni–Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodes

2008 ◽  
Vol 44 (6) ◽  
pp. 735-741 ◽  
Author(s):  
Kang-Won Kim ◽  
Hyun-Gi Hong ◽  
June-O Song ◽  
Joon-Ho Oh ◽  
Tae-Yeon Seong
Keyword(s):  
Solid Solution ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

Thermally Stable and Reflective RhZn/Ag Ohmic Contacts to p-type GaN for Near-UV Flip-chip Light-emitting Diodes

2011 ◽  
Vol 59 (1) ◽  
pp. 156-160 ◽  
Author(s):  
Seong-Han Park ◽  
Joon-Woo Jeon ◽  
Tae-Yeon Seong ◽  
Jeong-Tak Oh
Keyword(s):  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Thermally Stable ◽  
Light Emitting ◽  
P Type

High-reflectivity Ag-based p-type ohmic contacts for blue light-emitting diodes

2009 ◽  
Vol 6 (S2) ◽  
pp. S830-S832 ◽  
Author(s):  
Ryosuke Kawai ◽  
Toshiaki Mori ◽  
Wataru Ochiai ◽  
Atushi Suzuki ◽  
Motoaki Iwaya ◽  
...  
Keyword(s):  
Blue Light ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
High Reflectivity ◽  
P Type

Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

2005 ◽  
Vol 20 (9) ◽  
pp. 921-924 ◽  
Author(s):  
Keun-Yong Ban ◽  
Hyun-Gi Hong ◽  
Do Young Noh ◽  
Tae-Yeon Seong ◽  
June-O Song ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Indium Zinc Oxide ◽  
P Type

Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes

2010 ◽  
Vol 13 (4) ◽  
pp. 272-275 ◽  
Author(s):  
Joon-Ho Oh ◽  
Kyoung-Kook Kim ◽  
Hyun-Gi Hong ◽  
Kyeong-Jae Byeon ◽  
Heon Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Electrical Characteristics ◽  
Light Emitting ◽  
P Type
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