High-reflectivity Ag-based p-type ohmic contacts for blue light-emitting diodes

2009 ◽  
Vol 6 (S2) ◽  
pp. S830-S832 ◽  
Author(s):  
Ryosuke Kawai ◽  
Toshiaki Mori ◽  
Wataru Ochiai ◽  
Atushi Suzuki ◽  
Motoaki Iwaya ◽  
...  
Keyword(s):  
Blue Light ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
High Reflectivity ◽  
P Type

High-reflectivity Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

2004 ◽  
Vol 85 (14) ◽  
pp. 2797-2799 ◽  
Author(s):  
Guan-Ting Chen ◽  
Chang-Chi Pan ◽  
Chi-Shin Fang ◽  
Tzu-Chien Huang ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
High Reflectivity ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

INTEGRATION OF N- AND P-CONTACTS TO GaN-BASED LIGHT EMITTING DIODES

2011 ◽  
Vol 20 (03) ◽  
pp. 521-525 ◽  
Author(s):  
WENTING HOU ◽  
THEERADETCH DETCHPROHM ◽  
CHRISTIAN WETZEL
Keyword(s):  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Voltage Drop ◽  
Light Emitting ◽  
Low Resistance ◽  
Electrical Devices ◽  
P Type ◽  
Lower Series ◽  
Post Deposition

Low-resistance Ohmic contacts are essential for the fabrication of electrical devices. While low contact resistance has been achieved to p -type layers or n -type layers separately, contacts are likely to degrade when both types need to be integrated into a single fabrication process, in particular when prior mesa etching is required. We present a solution to the problem, resulting in low-resistance Ohmic contacts on n -type GaN layers without post-deposition thermal anneal, while maintaining the quality of typical p -type contacts. We implement an integrated process for both, n - and p -contacts, involving an oxygen pretreatment to fabricate light emitting diodes with lower series resistance in the contacts and lower voltage drop at high current when compared to separately optimized contacts.

Single Wall Carbon Nanotubes for p-Type Ohmic Contacts to GaN Light-Emitting Diodes

Nano Letters ◽  
2004 ◽  
Vol 4 (5) ◽  
pp. 911-914 ◽  
Author(s):  
K. Lee ◽  
Z. Wu ◽  
Z. Chen ◽  
F. Ren ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Single Wall Carbon Nanotubes ◽  
Light Emitting ◽  
Single Wall Carbon ◽  
P Type

Low-resistance and transparent Ni–Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodes

2008 ◽  
Vol 44 (6) ◽  
pp. 735-741 ◽  
Author(s):  
Kang-Won Kim ◽  
Hyun-Gi Hong ◽  
June-O Song ◽  
Joon-Ho Oh ◽  
Tae-Yeon Seong
Keyword(s):  
Solid Solution ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type
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