Optical beam induced resistance change (OBIRCH): overview and recent results

Abstract This paper shows that by combining electrical fault isolation and characterization by microprobing with physical fault isolation techniques both what is wrong with the circuit and where the defect is located can be determined with less microprobing and more safety from electrical recovery. In the first example, the unit was powered up using the optical beam induced resistance change (OBIRCH) supply, and OBIRCH was performed to determine if there were OBIRCH site differences between the good part and the return. The second example uses a combination of electrical fault isolation and characterization with microprobing and the physical fault isolation tool of lock in thermography (LIT). With these two examples, it has been shown that the use of electrical fault isolation and microprobing can be used to enhance the physical fault isolation tools of OBIRCH and LIT.

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Failure analysis case studies using the IR-OBIRCH (infrared optical beam induced resistance change) method

Proceedings Eighth Asian Test Symposium (ATS'99) ◽

10.1109/ats.1999.810781 ◽

2003 ◽

Cited By ~ 29

Author(s):

K. Nikawa ◽

S. Inoue ◽

K. Morimoto ◽

S. Sone

Keyword(s):

Failure Analysis ◽

Case Studies ◽

Induced Resistance ◽

Optical Beam ◽

Resistance Change

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A Simple Adapter for Soft Defect Localization Using OBIRCH

ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2007p0191 ◽

2007 ◽

Author(s):

Ted Kolasa

Keyword(s):

Induced Resistance ◽

Low Cost ◽

Optical Beam ◽

Significant Cost ◽

Resistance Change ◽

Design Considerations ◽

Defect Localization

Abstract Equipment manufacturers have developed peripherals for their tools that add soft defect localization (SDL) capability to existing optical beam tools, in many cases providing excellent results. However, these upgrades add significant cost to the tool. This paper presents the design considerations for a simple adapter that was developed in house to add SDL capability to optical beam induced resistance change (OBIRCH) tool, including resolution of some unexpected problems. This solution represents a simple, low cost method to add SDL testing capability to the OBIRCH tool and can also be used in conjunction with OBIC and XIVA tools with little or no modification. An early example of the SDL results provided by this adapter is also presented.

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Analysis and path localization of gate current in AlGaN/GaN HEMTs using low frequency noise measurements and Optical Beam Induced Resistance Change technique

2013 IEEE MTT-S International Microwave Symposium Digest (MTT) ◽

10.1109/mwsym.2013.6697490 ◽

2013 ◽

Cited By ~ 3

Author(s):

S. Karboyan ◽

J. G. Tartarin ◽

D. Carisetti ◽

B. Lambert

Keyword(s):

Induced Resistance ◽

Low Frequency ◽

Optical Beam ◽

Frequency Noise ◽

Low Frequency Noise ◽

Resistance Change ◽

Gate Current ◽

Change Technique ◽

Noise Measurements ◽

Gan Hemts

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Killer defect detection using the IR-OBIRCH (infrared optical-beam-induced resistance-change) method

1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314) ◽

10.1109/issm.1999.808748 ◽

2003 ◽

Cited By ~ 2

Author(s):

K. Nikawa ◽

S. Inoue ◽

K. Morimoto

Keyword(s):

Induced Resistance ◽

Defect Detection ◽

Optical Beam ◽

Resistance Change

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High Resolution Localization Using Lock-in Based Electron Beam Methods

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0446 ◽

2017 ◽

Author(s):

Felix Rolf ◽

Christian Hollerith ◽

Christian Feuerbaum

Keyword(s):

Electron Beam ◽

High Resolution ◽

Induced Resistance ◽

High Efficiency ◽

Optical Beam ◽

Resistance Change ◽

Root Cause ◽

Special Challenge ◽

Electron Beam Induced Current ◽

Lock In

Abstract With decreasing transistor sizes accurate failure localization becomes more and more important in order to find the root cause of failures with high efficiency. Field returns are a special challenge, since there is usually only one sample for preparation. Hence, reliable high resolution localization is mandatory for a successful preparation. Optical beam induced resistance change (OBIRCH) is a powerful tool for localization but has resolution limitations due to the diameter of the optical beam. The tool can be further improved by the lock-in technique. In this paper we demonstrate that the lock-in technique can also be applied for electron beam localization methods like electron beam induced current (EBIC) / electron beam absorbed current (EBAC) and resistance change imaging (RCI) / electron beam induced resistance change (EBIRCH).

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3DIC Fault Isolation Using the OBIRCH Approach

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0060 ◽

2011 ◽

Author(s):

Ming-Sung Hsu ◽

Yian-Liang Kuo ◽

Yu-Ting Lin ◽

Ru-Ying Huang ◽

Min-Feng Ku ◽

...

Keyword(s):

Induced Resistance ◽

Fault Isolation ◽

Optical Beam ◽

Resistance Change ◽

Non Destructive

Abstract This paper uses an interesting specific case study to highlight the non-destructive fault isolation demonstration of 3DIC stacked dies applied the optical beam induced resistance change (OBIRCH) approach.

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