scholarly journals Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque

2019 ◽  
Vol 40 (9) ◽  
pp. 1554-1557 ◽  
Author(s):  
Meiyin Yang ◽  
Jun Luo ◽  
Yang Ji ◽  
Hou-Zhi Zheng ◽  
Kaiyou Wang ◽  
...  
Keyword(s):  
Electric Field ◽  
Magnetization Reversal ◽  
Spin Orbit ◽  
Logic Devices ◽  
Spin Logic

scholarly journals Magnetic properties of (Bi1−xLax)(Fe,Co)O3 films fabricated by a pulsed DC reactive sputtering and demonstration of magnetization reversal by electric field

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Munusamy Kuppan ◽  
Daichi Yamamoto ◽  
Genta Egawa ◽  
Sivaperuman Kalainathan ◽  
Satoru Yoshimura
Keyword(s):  
Electric Field ◽  
Magnetization Reversal ◽  
High Performance ◽  
Magnetic Domain ◽  
Magnetic Film ◽  
Film Plane ◽  
Force Microscopy ◽  
Domain Structures ◽  
Pulsed Dc ◽  
Submicron Scale

Abstract(Bi1−xLax)(Fe,Co)O3 multiferroic magnetic film were fabricated using pulsed DC (direct current) sputtering technique and demonstrated magnetization reversal by applied electric field. The fabricated (Bi0.41La0.59)(Fe0.75Co0.25)O3 films exhibited hysteresis curves of both ferromagnetic and ferroelectric behavior. The saturated magnetization (Ms) of the multiferroic film was about 70 emu/cm3. The squareness (S) (= remanent magnetization (Mr)/Ms) and coercivity (Hc) of perpendicular to film plane are 0.64 and 4.2 kOe which are larger compared with films in parallel to film plane of 0.5 and 2.5 kOe. The electric and magnetic domain structures of the (Bi0.41La0.59)(Fe0.75Co0.25)O3 film analyzed by electric force microscopy (EFM) and magnetic force microscopy (MFM) were clearly induced with submicron scale by applying a local electric field. This magnetization reversal indicates the future realization of high performance magnetic device with low power consumption.

scholarly journals Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

2021 ◽  
Vol 7 (5) ◽  
pp. eabe2892
Author(s):  
Dmitry Shcherbakov ◽  
Petr Stepanov ◽  
Shahriar Memaran ◽  
Yaxian Wang ◽  
Yan Xin ◽  
...  
Keyword(s):  
Electric Field ◽  
High Mobility ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Quantum Oscillations ◽  
Out Of Plane ◽  
Order Of Magnitude ◽  
Spin Degeneracy

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic, and topological phenomena and applications. In bulk materials, SOC strength is a constant. Here, we demonstrate SOC and intrinsic spin splitting in atomically thin InSe, which can be modified over a broad range. From quantum oscillations, we establish that the SOC parameter α is thickness dependent; it can be continuously modulated by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Unexpectedly, α could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.

Spin–orbit torque controllable complete spin logic in a single magnetic heterojunction

2021 ◽  
Vol 118 (15) ◽  
pp. 152403
Author(s):  
Y. N. Dong ◽  
X. N. Zhao ◽  
X. Han ◽  
Y. B. Fan ◽  
X. J. Xie ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Spin Logic

scholarly journals Electric-Field Control of Spin–Orbit Torques in WS2/Permalloy Bilayers

2018 ◽  
Vol 10 (3) ◽  
pp. 2843-2849 ◽  
Author(s):  
Weiming Lv ◽  
Zhiyan Jia ◽  
Bochong Wang ◽  
Yuan Lu ◽  
Xin Luo ◽  
...  
Keyword(s):  
Electric Field ◽  
Spin Orbit ◽  
Field Control

Plasmon modes in N-layer silicene structures

2021 ◽  
Author(s):  
Men Nguyen Van
Keyword(s):  
Electric Field ◽  
Random Phase ◽  
Single Layer ◽  
Plasmon Mode ◽  
Orbit Coupling ◽  
Collective Excitations ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Number Of Layers ◽  
Plasmon Modes

Abstract We investigate the plasmon properties in N-layer silicene systems consisting of N, up to 6, parallel single-layer silicene under the application of an out-of-plane electric field, taking into account the spin-orbit coupling within the random-phase approximation. Numerical calculations demonstrate that N undamped plasmon modes, including one in-phase optical and (N-1) out-of-phase acoustic modes, continue mainly outside the single-particle excitation area of the system. As the number of layers increases, the frequencies of plasmonic collective excitations increase and can become much larger than that in single layer silicene, more significant for high-frequency modes. The optical (acoustic) plasmon mode(s) noticeably (slightly) decreases with the increase in the bandgap and weakly depends on the number of layers. We observe that the phase transition of the system weakly affects the plasmon properties, and as the bandgap caused by the spin-orbit coupling equal that caused by the external electric field, the plasmonic collective excitations and their broadening function in multilayer silicene behave similarly to those in multilayer gapless graphene structures. Our investigations show that plasmon curves in the system move toward that in single layer silicene as the separation increases, and the impacts of this factor can be raised by a large number of layers in the system. Finally, we find that the imbalanced carrier density between silicene layers significantly decreases plasmon frequencies, depending on the number of layers.

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