Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

2019 ◽  
Vol 40 (4) ◽  
pp. 526-529 ◽  
Author(s):  
Jin Wei ◽  
Ruiliang Xie ◽  
Han Xu ◽  
Hanxing Wang ◽  
Yuru Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Dynamic Threshold ◽  
Charge Storage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Storage Mechanism ◽  
Charge Storage Mechanism

P-22: Spice Model for Detection of Dynamic Threshold Voltage Shift During Failure Analysis of Oxide TFT-Based AMD Gate Drivers

2017 ◽  
Vol 48 (1) ◽  
pp. 1307-1310
Author(s):  
Won-Seok Lee ◽  
Jong-Suk Kang ◽  
Nam-Kyun Tak ◽  
In-Chol Choi ◽  
Jin-Young Kim ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Threshold Voltage ◽  
Dynamic Threshold ◽  
Threshold Voltage Shift ◽  
Oxide Tft ◽  
Voltage Shift ◽  
Spice Model ◽  
Gate Drivers

Spice model for detection of dynamic threshold voltage shift during failure analysis of oxide TFT-based AMD gate drivers

2017 ◽  
Vol 25 (11) ◽  
pp. 663-671 ◽  
Author(s):  
Won-Seok Lee ◽  
Mallory Mativenga ◽  
Jong-Suk Kang ◽  
Nam-Kyun Tak ◽  
In-Chol Choi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Threshold Voltage ◽  
Dynamic Threshold ◽  
Threshold Voltage Shift ◽  
Oxide Tft ◽  
Voltage Shift ◽  
Spice Model ◽  
Gate Drivers

Effect of Structural Ordering on the Charge Storage Mechanism of p-Type Organic Electrode Materials

2021 ◽  
Vol 13 (6) ◽  
pp. 7135-7141 ◽  
Author(s):  
Brian M. Peterson ◽  
Cara N. Gannett ◽  
Luis Melecio-Zambrano ◽  
Brett P. Fors ◽  
Héctor Abruña
Keyword(s):  
Electrode Materials ◽  
Charge Storage ◽  
Structural Ordering ◽  
Storage Mechanism ◽  
Organic Electrode ◽  
Charge Storage Mechanism ◽  
P Type

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation

2008 ◽  
Vol 47 (4) ◽  
pp. 3189-3192 ◽  
Author(s):  
Chang Bum Park ◽  
Takamichi Yokoyama ◽  
Tomonori Nishimura ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift
Sign in / Sign up

Export Citation Format

Share Document