Electrical characterization of defects in SiCl4 plasma-etched n-GaAs and Pd Schottky diodes fabricated on it

1997 ◽  
Vol 71 (5) ◽  
pp. 668-670 ◽  
Author(s):  
F. D. Auret ◽  
G. Myburg ◽  
W. E. Meyer ◽  
P. N. K. Deenapanray ◽  
H. Nordhoff ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Electrical Characterization

Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

2005 ◽  
Vol 483-485 ◽  
pp. 933-936 ◽  
Author(s):  
R. Pierobon ◽  
G. Meneghesso ◽  
E. Zanoni ◽  
Fabrizio Roccaforte ◽  
Francesco La Via ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Temperature Stability ◽  
Voltage Versus ◽  
Good Thermal Stability ◽  
Barrier Heights ◽  
Schottky Rectifiers ◽  
Reverse Recovery Time

The static and dynamic electrical characterization of power Schottky rectifiers both with Ti and Ni2Si as Schottky metals having low negative coefficient of the breakdown voltage versus temperature will be presented in this paper. The values of the barrier height are respectively 1.28eV and 1.68eV, as extracted using the Tung’s model for inhomogeneous contacts from forward currentvoltage characteristics. These values were found to be in good agreement with those obtained by means of capacitance-voltage measurements. The breakdown voltage shows an almost linear dependence from the temperature for both types of devices. The extracted coefficients are respectively -0.08V/°C and -0.11V/°C, thus guarantying stable and reliable behaviour. Very short reverse recovery time at RT and at 125°C confirms the good thermal stability of these devices.

Electrical characterization of Au/n-GaN Schottky diodes

2004 ◽  
Vol 85 (1) ◽  
pp. 27-31 ◽  
Author(s):  
B Akkal ◽  
Z Benamara ◽  
H Abid ◽  
A Talbi ◽  
B Gruzza
Keyword(s):  
Schottky Diodes ◽  
Electrical Characterization

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

2015 ◽  
Vol 821-823 ◽  
pp. 436-439 ◽  
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
...  
Keyword(s):  
Barrier Height ◽  
Temperature Sensor ◽  
High Performance ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Post Annealing ◽  
Schottky Device ◽  
Post Annealing Temperature

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.

Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

1996 ◽  
Vol 441 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg ◽  
A. Grisaru
Keyword(s):  
Diffusion Barrier ◽  
Vacuum Annealing ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractThe TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

Electrical Characterization of Schottky Diodes Based on Inkjet-Printed TiO2 Films

2018 ◽  
Vol 39 (12) ◽  
pp. 1940-1943 ◽  
Author(s):  
A. G. Martinez-Lopez ◽  
W. Y. Padron-Hernandez ◽  
D. Pourjafari ◽  
G. Oskam ◽  
G. Rodriguez-Gattorno ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Electrical Characterization ◽  
Tio2 Films
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