Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays

2018 ◽  
Vol 39 (8) ◽  
pp. 1175-1178 ◽  
Author(s):  
Gianluca Nicosia ◽  
Akira Goda ◽  
Alessandro S. Spinelli ◽  
Christian Monzio Compagnoni
Keyword(s):  
Nand Flash ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CA07 ◽  
Author(s):  
Bong-Su Jo ◽  
Ho-Jung Kang ◽  
Sung-Min Joe ◽  
Min-Kyu Jeong ◽  
Kyung-Rok Han ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND flash arrays

2015 ◽  
Author(s):  
Carmine Miccoli ◽  
Giovanni M. Paolucci ◽  
Christian Monzio Compagnoni ◽  
Alessandro S. Spinelli ◽  
Akira Goda
Keyword(s):  
Nand Flash ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Random Telegraph Noise-Induced Sensitivity of Data Retention to Cell Position in the Programmed Distribution of NAND Flash Memory Arrays

2015 ◽  
Vol 36 (7) ◽  
pp. 678-680 ◽  
Author(s):  
Davide Resnati ◽  
Christian Monzio Compagnoni ◽  
Giovanni M. Paolucci ◽  
Carmine Miccoli ◽  
Alessandro S. Spinelli ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Random Telegraph Noise ◽  
Cell Position ◽  
Telegraph Noise ◽  
Memory Arrays

scholarly journals Random Telegraph Noise in 3D NAND Flash Memories

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 703
Author(s):  
Alessandro S. Spinelli ◽  
Gerardo Malavena ◽  
Andrea L. Lacaita ◽  
Christian Monzio Compagnoni
Keyword(s):  
Working Conditions ◽  
Simulation Models ◽  
Integration Scheme ◽  
Current Transport ◽  
Nand Flash ◽  
Flash Memories ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Relevant Role ◽  
The Impact

In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport. Starting from that, experimental data for RTN in 3D arrays are presented and explained via theoretical and simulation models. The attention is drawn, in particular, to the changes in the RTN dependences on the array working conditions that resulted from the transition from planar to 3D architectures. Such changes are explained by considering the impact of highly-defective grain boundaries on percolative current transport in cell channels in combination with the localized nature of the RTN traps.

Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in nand Flash Memory Strings

2010 ◽  
Vol 31 (7) ◽  
pp. 635-637 ◽  
Author(s):  
Sung-Min Joe ◽  
Jeong-Hyong Yi ◽  
Sung-Kye Park ◽  
Hyuck-In Kwon ◽  
Jong-Ho Lee
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Voltage Variation ◽  
Telegraph Noise
Sign in / Sign up

Export Citation Format

Share Document