Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in nand Flash Memory Strings

2010 ◽  
Vol 31 (7) ◽  
pp. 635-637 ◽  
Author(s):  
Sung-Min Joe ◽  
Jeong-Hyong Yi ◽  
Sung-Kye Park ◽  
Hyuck-In Kwon ◽  
Jong-Ho Lee
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Voltage Variation ◽  
Telegraph Noise

Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String

2011 ◽  
Vol 58 (1) ◽  
pp. 67-73 ◽  
Author(s):  
Sung-Min Joe ◽  
Jeong-Hyong Yi ◽  
Sung-Kye Park ◽  
Hyungcheol Shin ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Floating Gate ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Voltage Fluctuation ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CA07 ◽  
Author(s):  
Bong-Su Jo ◽  
Ho-Jung Kang ◽  
Sung-Min Joe ◽  
Min-Kyu Jeong ◽  
Kyung-Rok Han ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Random Telegraph Noise-Induced Sensitivity of Data Retention to Cell Position in the Programmed Distribution of NAND Flash Memory Arrays

2015 ◽  
Vol 36 (7) ◽  
pp. 678-680 ◽  
Author(s):  
Davide Resnati ◽  
Christian Monzio Compagnoni ◽  
Giovanni M. Paolucci ◽  
Carmine Miccoli ◽  
Alessandro S. Spinelli ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Random Telegraph Noise ◽  
Cell Position ◽  
Telegraph Noise ◽  
Memory Arrays
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