Determination of Minority Carrier Lifetime of Holes in Diamond p-i-n Diodes Using Reverse Recovery Method

2018 ◽  
Vol 39 (4) ◽  
pp. 552-555 ◽  
Author(s):  
Maitreya Dutta ◽  
Saptarshi Mandal ◽  
Raghuraj Hathwar ◽  
Alec M. Fischer ◽  
Franz A. M. Koeck ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Recovery Method

scholarly journals Study of Photoluminescence Decay by Time-correlated Single Photon Counting for the Determination of the Minority-carrier Lifetime in Silicon

2014 ◽  
Vol 55 ◽  
pp. 121-127 ◽  
Author(s):  
Stéphanie Parola ◽  
Mehdi Daanoune ◽  
Alexandru Focsa ◽  
Bachir Semmache ◽  
Erwann Picard ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Single Photon ◽  
Photon Counting ◽  
Minority Carrier Lifetime ◽  
Single Photon Counting ◽  
Photoluminescence Decay

scholarly journals Experimental Determination of Effective Minority Carrier Lifetime in HgCdTe Photovoltaic Detectors Using Optical and Electrical Methods

2015 ◽  
Vol 2015 ◽  
pp. 1-5
Author(s):  
Haoyang Cui ◽  
Jialin Wang ◽  
Chaoqun Wang ◽  
Can Liu ◽  
Kaiyun Pi ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Open Circuit ◽  
Photodetector Array ◽  
Photovoltaic Detectors ◽  
Recovery Technique ◽  
Small Resistance ◽  
Parallel Resistance

This paper presents experiment measurements of minority carrier lifetime using three different methods including modified open-circuit voltage decay (PIOCVD) method, small parallel resistance (SPR) method, and pulse recovery technique (PRT) onpnjunction photodiode of the HgCdTe photodetector array. The measurements are done at the temperature of operation near 77 K. A saturation constant background light and a small resistance paralleled with the photodiode are used to minimize the influence of the effect of junction capacitance and resistance on the minority carrier lifetime extraction in the PIOCVD and SPR measurements, respectively. The minority carrier lifetime obtained using the two methods is distributed from 18 to 407 ns and from 0.7 to 110 ns for the different Cd compositions. The minority carrier lifetime extracted from the traditional PRT measurement is found in the range of 4 to 20 ns forx=0.231–0.4186. From the results, it can be concluded that the minority carrier lifetime becomes longer with the increase of Cd composition and the pixels dimensional area.

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