Simulation Study of a High-Current and Fast Dual-Gate IGBT Device With High- $K$ Material

2016 ◽  
Vol 37 (9) ◽  
pp. 1181-1184 ◽  
Author(s):  
Junhong Li ◽  
Ping Li
Keyword(s):  
Simulation Study ◽  
High Current ◽  
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scholarly journals Experimental and simulation study of a high current 1D silicon nanowire transistor using heavily doped channels

2016 ◽  
Author(s):  
Vihar P. Georgiev ◽  
Muhammad M. Mirza ◽  
Alexandru-Iustin Dochioiu ◽  
Fikru-Adamu Lema ◽  
Slavatore M. Amoroso ◽  
...  
Keyword(s):  
Simulation Study ◽  
Silicon Nanowire ◽  
High Current ◽  
Nanowire Transistor ◽  
Heavily Doped

scholarly journals High-Current-Drive Dual-Gate a-IGZO TFT With Nanometer Dotlike Doping

2013 ◽  
Vol 34 (10) ◽  
pp. 1274-1276 ◽  
Author(s):  
Chun-Hung Liao ◽  
Chang-Hung Li ◽  
Hsiao-Wen Zan ◽  
Hsin-Fei Meng ◽  
Chuang-Chuang Tsai
Keyword(s):  
Current Drive ◽  
High Current ◽  
Dual Gate ◽  
Igzo Tft
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