Lateral Grain Growth of Amorphous Silicon Films With Wide Thickness Range by Blue Laser Annealing and Application to High Performance Poly-Si TFTs

2016 ◽  
Vol 37 (3) ◽  
pp. 291-294 ◽  
Author(s):  
Seonghyun Jin ◽  
Younwoo Choe ◽  
Suhui Lee ◽  
Tae-Woong Kim ◽  
Mallory Mativenga ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
High Performance ◽  
Laser Annealing ◽  
Blue Laser ◽  
Silicon Films

41.2: Invited Paper: Crystal Control of Amorphous Silicon by Laser Annealing Using Blue Laser Diode

2021 ◽  
Vol 52 (S2) ◽  
pp. 501-504
Author(s):  
Y Yang ◽  
J Kosugi ◽  
M Kinoshita ◽  
S Toriyama ◽  
K Saito ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Laser Diode ◽  
Laser Annealing ◽  
Blue Laser ◽  
Blue Laser Diode

P-140L:Late-News Poster: Crystallization of Amorphous Silicon Films on Flexible Glass by Blue-Multi-Diode-Laser Annealing as a New LTPS

2012 ◽  
Vol 43 (1) ◽  
pp. 1129-1132 ◽  
Author(s):  
Takashi Noguchi ◽  
Takuma Nishinohara ◽  
Jean de Dieu Mugiraneza ◽  
Katsuya Shirai ◽  
Tatsuya Okada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Diode Laser ◽  
Laser Annealing ◽  
Silicon Films

Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5063-5068 ◽  
Author(s):  
Jin-Wook Seo ◽  
Satoru Akiyama ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Excimer Laser Annealing ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

Effect of Deposition Temperature on the Photoresponse of Crystallized Hydrogenated Amorphous Silicon Films

1994 ◽  
Vol 358 ◽  
Author(s):  
Nagarajan Sridhar ◽  
D. D. L. Chung ◽  
W. A. Anderson ◽  
J. Coleman
Keyword(s):  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Furnace Annealing ◽  
C 50 ◽  
Hydrogenated Amorphous

ABSTRACTThe deposition temperature of hydrogenated amorphous silicon films deposited by dc glow discharge was found to affect the photoresponse (ratio of the photo to dark conductivity) after crystallization of the film. This effect depended on the crystallization technique. For crystallization by laser annealing, the photoresponse (0.15 - 1.5) increased with increasing deposition temperature (150 - 300 °C) due to the increase in SiH and SiH2 bonding, as shown by infrared spectroscopy. For crystallization by furnace annealing (e.g. 650 °C, 50 h), the photoresponse (0.08 - 0) decreased with increasing deposition temperature (150 - 300 °C) due to the decrease in grain size and crystallinity as shown by x-ray diffraction; the complete loss in hydrogen during furnace annealing made the photoresponse low and the silicon-hydrogen bonding effect immaterial. Thus, laser crystallization at the highest deposition temperature gave the highest photoresponse.

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