Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method
2015 ◽
Vol 36
(12)
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pp. 1332-1335
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2015 ◽
Vol 36
(10)
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pp. 1040-1043
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2017 ◽
Vol 35
(1)
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pp. 010601
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2013 ◽
Vol 34
(11)
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pp. 1403-1405
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2012 ◽
Vol 51
(10R)
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pp. 100206
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2010 ◽
Vol 49
(10)
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pp. 100205
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